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IPB50R140CP-VB Product details
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Product Introduction
**IPB50R140CP-VB** is a high-voltage, high-current N-Channel MOSFET that uses a TO263 package and is manufactured based on SJ_Multi-EPI technology. This MOSFET can withstand a drain-source voltage of up to 500V and has a maximum continuous current capability of 30A. Its on-resistance is 140mΩ at VGS=10V, making it suitable for high-voltage, high-power applications. **IPB50R140CP-VB** is designed to handle high-voltage power management and switching applications to ensure high efficiency and reliability.
**IPB50R140CP-VB** is a high-voltage, high-current N-Channel MOSFET that uses a TO263 package and is manufactured based on SJ_Multi-EPI technology. This MOSFET can withstand a drain-source voltage of up to 500V and has a maximum continuous current capability of 30A. Its on-resistance is 140mΩ at VGS=10V, making it suitable for high-voltage, high-power applications. **IPB50R140CP-VB** is designed to handle high-voltage power management and switching applications to ensure high efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 30A | 140mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 30A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 30A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 140mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 30A
- **Technology**: SJ_Multi-EPI
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 140mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 30A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **High-voltage power management system**:
**IPB50R140CP-VB**'s high voltage handling capability and high current capability make it ideal for high-voltage power management systems, including high-voltage DC-DC converters and power switch modules. In these applications, this MOSFET can effectively manage power conversion under high voltage conditions, improving the efficiency and stability of the system.
2. **Power transmission system**:
In power transmission and distribution systems, **IPB50R140CP-VB** can be used for high-voltage switching and power regulation. The high withstand voltage characteristics of this MOSFET enable it to handle high-voltage loads in power systems and ensure stable switching performance and low power losses, making it suitable for high-voltage switching applications in substations and power equipment.
3. **Industrial equipment**:
In industrial equipment, especially equipment that requires high voltage operation, **IPB50R140CP-VB** can be used to drive high-voltage loads and power switches. The high voltage and high current capabilities of this MOSFET enable it to meet the high power and high voltage requirements in industrial environments, improving the reliability and efficiency of equipment.
4. **Power Inverter**:
This MOSFET is suitable for power inverters and other high voltage power conversion applications. **IPB50R140CP-VB**'s high voltage tolerance and stable conduction performance can handle high voltage DC power in the inverter for efficient power conversion, suitable for solar inverters and other high power inverter modules.
1. **High-voltage power management system**:
**IPB50R140CP-VB**'s high voltage handling capability and high current capability make it ideal for high-voltage power management systems, including high-voltage DC-DC converters and power switch modules. In these applications, this MOSFET can effectively manage power conversion under high voltage conditions, improving the efficiency and stability of the system.
2. **Power transmission system**:
In power transmission and distribution systems, **IPB50R140CP-VB** can be used for high-voltage switching and power regulation. The high withstand voltage characteristics of this MOSFET enable it to handle high-voltage loads in power systems and ensure stable switching performance and low power losses, making it suitable for high-voltage switching applications in substations and power equipment.
3. **Industrial equipment**:
In industrial equipment, especially equipment that requires high voltage operation, **IPB50R140CP-VB** can be used to drive high-voltage loads and power switches. The high voltage and high current capabilities of this MOSFET enable it to meet the high power and high voltage requirements in industrial environments, improving the reliability and efficiency of equipment.
4. **Power Inverter**:
This MOSFET is suitable for power inverters and other high voltage power conversion applications. **IPB50R140CP-VB**'s high voltage tolerance and stable conduction performance can handle high voltage DC power in the inverter for efficient power conversion, suitable for solar inverters and other high power inverter modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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