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IPB50N10S3L-16-VB Product details
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IPB50N10S3L-16-VB is a high-performance N-channel MOSFET in TO263 package, designed for medium and high voltage applications. The MOSFET provides a drain-source voltage (VDS) of 100V and a drain current (ID) capability of up to 100A. Its on-resistance (RDS(ON)) is 10mΩ at VGS=10V, ensuring low conduction losses and high efficiency. Using Trench technology, IPB50N10S3L-16-VB has excellent switching performance and thermal management characteristics, and is suitable for applications requiring high current and high voltage.
**IPB50N10S3L-16-VB
IPB50N10S3L-16-VB is a high-performance N-channel MOSFET in TO263 package, designed for medium and high voltage applications. The MOSFET provides a drain-source voltage (VDS) of 100V and a drain current (ID) capability of up to 100A. Its on-resistance (RDS(ON)) is 10mΩ at VGS=10V, ensuring low conduction losses and high efficiency. Using Trench technology, IPB50N10S3L-16-VB has excellent switching performance and thermal management characteristics, and is suitable for applications requiring high current and high voltage.
**IPB50N10S3L-16-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
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- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage(VDS)**: 100V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 2.5V
- **On-resistance(RDS(ON))**: 23mΩ @ VGS=4.5V, 10mΩ @ VGS=10V
- **Drain current(ID)**: 100A
- **Technology**: Trench
**
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage(VDS)**: 100V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 2.5V
- **On-resistance(RDS(ON))**: 23mΩ @ VGS=4.5V, 10mΩ @ VGS=10V
- **Drain current(ID)**: 100A
- **Technology**: Trench
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Domain and module applications：
1. **High-efficiency power management**
The IPB50N10S3L-16-VB has a wide range of applications in high-efficiency power management systems, especially in DC-DC converters and switching power modules. Its low on-resistance and high current handling capability improve the efficiency of power conversion and reduce energy loss, making it an excellent performer in high-power applications.
2. **Electric Vehicle (EV) Charging and Power Management**
In electric vehicle charging systems and power management modules, this MOSFET can effectively manage high-current switching operations. Its high current capability and low conduction loss characteristics make it an ideal choice in electric vehicle chargers and battery management systems, helping to improve charging efficiency and system stability.
3. **Industrial Motor Drive**
The IPB50N10S3L-16-VB is suitable for industrial motor drive systems, especially in application scenarios that require high current and high voltage. Its high current handling capability and excellent switching performance enable it to effectively control and drive high-power motors, improving the working efficiency and reliability of equipment.
4. **Power Inverter**
In power inverter applications, such as solar inverters and wind inverters, IPB50N10S3L-16-VB can be used as a high voltage and high current switch. Its low on-resistance and high current capability improve the efficiency of energy conversion, ensure the efficient operation of renewable energy systems, and optimize the overall performance of the inverter.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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