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IPB50CN10N G-VB Product details
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IPB50CN10N G-VB Product Introduction
IPB50CN10N G-VB is a high-performance single N-channel MOSFET packaged in TO263. This MOSFET uses advanced Trench technology and is designed to handle medium to high power applications. Its high withstand voltage and low on-resistance characteristics make it suitable for a variety of occasions requiring high current and high efficiency. With a drain-source voltage withstand capability of 100V and a maximum drain current capability of 45A, the IPB50CN10N G-VB provides excellent electrical performance and stability, making it ideal for high-power electronic devices and power management applications.
IPB50CN10N G-VB is a high-performance single N-channel MOSFET packaged in TO263. This MOSFET uses advanced Trench technology and is designed to handle medium to high power applications. Its high withstand voltage and low on-resistance characteristics make it suitable for a variety of occasions requiring high current and high efficiency. With a drain-source voltage withstand capability of 100V and a maximum drain current capability of 45A, the IPB50CN10N G-VB provides excellent electrical performance and stability, making it ideal for high-power electronic devices and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IPB50CN10N G-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 35mΩ @ VGS=4.5V; 30mΩ @ VGS=10V
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 35mΩ @ VGS=4.5V; 30mΩ @ VGS=10V
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management**: The IPB50CN10N G-VB is suitable for use in high-efficiency power management modules such as DC-DC converters and power adapters. Its low on-resistance ensures that energy losses during power conversion are minimized, improving the overall efficiency and reliability of the system.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: In the battery management system (BMS) and motor controller of electric vehicles, this MOSFET can handle high currents and provide reliable switching control. Its high withstand voltage capability and low on-resistance help optimize the performance of electric vehicles and improve the efficiency of batteries and motors.
3. **Industrial applications**: The IPB50CN10N G-VB can be used in industrial motor drives and power control systems. Its high current carrying capacity and excellent switching characteristics ensure the stable operation of industrial equipment and are suitable for use in high-load and high-power industrial environments.
4. **Consumer Electronics**: In high-end consumer electronic devices, such as computer power supplies and high-power LED drivers, this MOSFET can effectively regulate and control power. Its low on-resistance and high efficiency characteristics help improve the power efficiency and extend the service life of the equipment.
As a high-performance MOSFET device, the IPB50CN10N G-VB has excellent electrical performance and reliability, making it play an important role in power management, automotive electronics, industrial applications, and consumer electronics.
1. **Power management**: The IPB50CN10N G-VB is suitable for use in high-efficiency power management modules such as DC-DC converters and power adapters. Its low on-resistance ensures that energy losses during power conversion are minimized, improving the overall efficiency and reliability of the system.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: In the battery management system (BMS) and motor controller of electric vehicles, this MOSFET can handle high currents and provide reliable switching control. Its high withstand voltage capability and low on-resistance help optimize the performance of electric vehicles and improve the efficiency of batteries and motors.
3. **Industrial applications**: The IPB50CN10N G-VB can be used in industrial motor drives and power control systems. Its high current carrying capacity and excellent switching characteristics ensure the stable operation of industrial equipment and are suitable for use in high-load and high-power industrial environments.
4. **Consumer Electronics**: In high-end consumer electronic devices, such as computer power supplies and high-power LED drivers, this MOSFET can effectively regulate and control power. Its low on-resistance and high efficiency characteristics help improve the power efficiency and extend the service life of the equipment.
As a high-performance MOSFET device, the IPB50CN10N G-VB has excellent electrical performance and reliability, making it play an important role in power management, automotive electronics, industrial applications, and consumer electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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