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IPB47N10SL-26-VB Product details
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Product Introduction
IPB47N10SL-26-VB is a high-performance single N-channel MOSFET in TO263 package, designed for medium and high voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 100V and the maximum on-current (ID) is 70A. Its on-resistance is 20mΩ at a gate drive voltage of 10V, which has relatively low power consumption characteristics. This MOSFET adopts advanced trench technology (Trench), providing excellent switching performance and power efficiency, and is suitable for a variety of power management applications that require high performance and reliability.
IPB47N10SL-26-VB is a high-performance single N-channel MOSFET in TO263 package, designed for medium and high voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 100V and the maximum on-current (ID) is 70A. Its on-resistance is 20mΩ at a gate drive voltage of 10V, which has relatively low power consumption characteristics. This MOSFET adopts advanced trench technology (Trench), providing excellent switching performance and power efficiency, and is suitable for a variety of power management applications that require high performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- @ VGS = 10V: 20mΩ
- **Maximum on-current (ID)**: 70A
- **Technology type**: Trench
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- @ VGS = 10V: 20mΩ
- **Maximum on-current (ID)**: 70A
- **Technology type**: Trench
Domain and module applications：
Applications and module examples: The design features of IPB47N10SL-26-VB MOSFET enable it to perform well in multiple high-efficiency power applications. First, in **DC-DC converters**, this MOSFET can efficiently convert voltage, handle high current loads, reduce power consumption and improve system efficiency. Secondly, in **switching power supply (SMPS)** applications, it can effectively control current, provide stable power output, reduce power loss, and ensure efficient operation of the power system. In addition, it also has important applications in **battery management systems (BMS)** for electric vehicles, which can handle higher current loads, ensure battery safety and performance, and reduce energy loss. The high voltage handling capability and stable switching performance of this MOSFET also make it suitable for **high-efficiency power modules** and **motor drive systems** and other fields, providing reliable performance and efficient power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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