IPB47N10S-33-VB Product details
Product introduction:
IPB47N10S-33-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and medium current applications. The device has a drain-source voltage (VDS) of 100V, a gate voltage (VGS) of ±20V, and a turn-on voltage (Vth) of 1.8V. Its on-resistance (RDS(ON)) is 35mΩ @ VGS=4.5V and 30mΩ @ VGS=10V at different gate voltages, and can carry a drain current (ID) of up to 45A. Using Trench technology, this MOSFET has excellent switching performance and low conduction losses, and is suitable for a variety of high-voltage and high-efficiency application scenarios.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Drain current (ID)**: 45A
- **Technology**: Trench technology
Domain and module applications:
1. **Power management**: IPB47N10S-33-VB plays an important role in high-voltage power management systems. Its 100V withstand voltage and medium on-resistance make it suitable for DC-DC converters and power switch modules. This MOSFET can be used in efficient power conversion and power distribution systems, providing stable performance and low power consumption.
2. **Automotive electronics**: In automotive electronic systems, this MOSFET is suitable for high-voltage power management and load switching applications. Its high withstand voltage and good conductivity make it suitable for automotive power control, motor drive and LED lighting systems, ensuring reliable operation and high efficiency.
3. **Switch mode power supply (SMPS)**: IPB47N10S-33-VB performs well in switch mode power supply applications, especially where 100V voltage needs to be handled. Its low on-resistance and high current carrying capacity make it suitable for a variety of efficient power conversion and regulation modules, such as computer power supplies, server power supplies and industrial power systems.
4. **Power Tools and Motor Drive**: This MOSFET can be used for high-voltage switching applications in power tools and motor drive systems. It can handle higher currents and provide stable current control, and is suitable for use in drive circuits of power tools, electric bicycles, and other electric devices.
5. **Load Switch and Protection Circuit**: In load switching and overcurrent protection circuits, the IPB47N10S-33-VB is able to handle high voltages and medium currents, and is suitable for load switching applications and protection circuit design, providing effective overcurrent protection and stable switching functions.
With its high voltage carrying capacity and low on-resistance, the IPB47N10S-33-VB excels in a variety of high-voltage, high-efficiency applications, and is an ideal choice for designing efficient power management and switching systems.
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