中文
English
IPB45P03P4L-11-VB Product details
Back to previous pageProduct introduction：
Product Introduction:
IPB45P03P4L-11-VB is a high-performance P-channel MOSFET in TO263 package, designed for low voltage and high current applications. The drain-source voltage (VDS) of this MOSFET is -30V, and the drain current (ID) can reach -75A. Its on-resistance (RDS(ON)) is only 8mΩ at VGS of 10V, showing excellent low conduction loss characteristics. IPB45P03P4L-11-VB uses Trench technology to ensure low switching losses and high efficiency, and is very suitable for use in scenarios that require high current handling and low power consumption.
IPB45P03P4L-11-VB is a high-performance P-channel MOSFET in TO263 package, designed for low voltage and high current applications. The drain-source voltage (VDS) of this MOSFET is -30V, and the drain current (ID) can reach -75A. Its on-resistance (RDS(ON)) is only 8mΩ at VGS of 10V, showing excellent low conduction loss characteristics. IPB45P03P4L-11-VB uses Trench technology to ensure low switching losses and high efficiency, and is very suitable for use in scenarios that require high current handling and low power consumption.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | 8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description:
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 11mΩ @ VGS=4.5V
- 8mΩ @ VGS=10V
- **Drain current (ID)**: -75A
- **Technology**: Trench technology, providing low on-resistance and high switching efficiency
- **Thermal resistance (Rth(ja))**: Typical value is about 62 K/W
- **Junction temperature range**: -55°C to +175°C
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 11mΩ @ VGS=4.5V
- 8mΩ @ VGS=10V
- **Drain current (ID)**: -75A
- **Technology**: Trench technology, providing low on-resistance and high switching efficiency
- **Thermal resistance (Rth(ja))**: Typical value is about 62 K/W
- **Junction temperature range**: -55°C to +175°C
Domain and module applications：
Applicable fields and module applications:
1. **High-efficiency power switch**: IPB45P03P4L-11-VB performs well in high-efficiency power switch applications, especially in power management systems that require reverse current control. Its low on-resistance enables it to effectively reduce power losses and improve the overall efficiency of the power system.
2. **Inverter and DC-DC converter**: In inverter and DC-DC converter (DC-DC) modules, this MOSFET can be used as a high-current switching element. Its high current carrying capacity and low conduction loss ensure efficient operation of the converter, suitable for applications such as solar inverters and battery chargers.
3. **Automotive electronics**: In automotive electronic systems such as power windows, door locks and motor controllers, IPB45P03P4L-11-VB provides reliable switching performance. Its high current and low loss characteristics make it suitable for automotive power management and control applications.
4. **Power management and protection**: This MOSFET is also widely used in power management and protection circuits, such as power supply overcurrent protection and overvoltage protection circuits. Its low on-resistance and high current capability can effectively protect the system from abnormal current.
5. **Battery Management System (BMS)**: In the battery management system, the IPB45P03P4L-11-VB can be used to control the charging and discharging process to ensure the safety and efficiency of the battery pack. Its high current capability and low switching loss are essential for battery protection and management.
The excellent performance and flexible application range of the IPB45P03P4L-11-VB make it excellent in applications requiring high current and low power consumption, and it is suitable for use in various electronic modules and systems.
1. **High-efficiency power switch**: IPB45P03P4L-11-VB performs well in high-efficiency power switch applications, especially in power management systems that require reverse current control. Its low on-resistance enables it to effectively reduce power losses and improve the overall efficiency of the power system.
2. **Inverter and DC-DC converter**: In inverter and DC-DC converter (DC-DC) modules, this MOSFET can be used as a high-current switching element. Its high current carrying capacity and low conduction loss ensure efficient operation of the converter, suitable for applications such as solar inverters and battery chargers.
3. **Automotive electronics**: In automotive electronic systems such as power windows, door locks and motor controllers, IPB45P03P4L-11-VB provides reliable switching performance. Its high current and low loss characteristics make it suitable for automotive power management and control applications.
4. **Power management and protection**: This MOSFET is also widely used in power management and protection circuits, such as power supply overcurrent protection and overvoltage protection circuits. Its low on-resistance and high current capability can effectively protect the system from abnormal current.
5. **Battery Management System (BMS)**: In the battery management system, the IPB45P03P4L-11-VB can be used to control the charging and discharging process to ensure the safety and efficiency of the battery pack. Its high current capability and low switching loss are essential for battery protection and management.
The excellent performance and flexible application range of the IPB45P03P4L-11-VB make it excellent in applications requiring high current and low power consumption, and it is suitable for use in various electronic modules and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
