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IPB45N06S4L-08-VB Product details
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1. Product Introduction
**IPB45N06S4L-08-VB** is a high-performance single N-channel MOSFET in TO263 package. The design of this MOSFET is mainly based on the needs of high current and low on-resistance, with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. It uses Trench trench technology to provide an extremely low on-resistance of only 4mΩ (at 10V gate-source voltage). This MOSFET can carry up to 150A of continuous drain current (ID), suitable for applications requiring high efficiency and high current handling.
**IPB45N06S4L-08-VB** is a high-performance single N-channel MOSFET in TO263 package. The design of this MOSFET is mainly based on the needs of high current and low on-resistance, with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. It uses Trench trench technology to provide an extremely low on-resistance of only 4mΩ (at 10V gate-source voltage). This MOSFET can carry up to 150A of continuous drain current (ID), suitable for applications requiring high efficiency and high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Model**: IPB45N06S4L-08-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Power loss**: Optimized to reduce power consumption and improve heat dissipation efficiency
- **Switching characteristics**: High switching speed, suitable for high frequency applications
- **Operating temperature range**: -55°C to 175°C
- **Model**: IPB45N06S4L-08-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Power loss**: Optimized to reduce power consumption and improve heat dissipation efficiency
- **Switching characteristics**: High switching speed, suitable for high frequency applications
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
3. Applications and modules
**IPB45N06S4L-08-VB** MOSFET's ultra-low on-resistance and high current capability enable it to excel in multiple application areas:
- **Power management**: In power management modules such as DC-DC converters, power regulators, and power switches, the IPB45N06S4L-08-VB can provide efficient power conversion. Its low on-resistance helps reduce energy loss and improve overall system efficiency.
- **Electric vehicles and battery management**: This MOSFET is very useful in the battery management system (BMS) of electric vehicles, especially during battery charging and discharging. Its high current handling capability and low on-resistance can improve the overall efficiency of the battery system and extend the battery life.
- **Industrial motor drive**: In industrial motor control and drive systems, this MOSFET can effectively control the power output of the motor. Its high current carrying capacity makes it suitable for high-power motor drive applications such as automation equipment and robots.
- **Uninterruptible Power Supply (UPS)**: The IPB45N06S4L-08-VB provides stable power management in UPS systems, supporting high-power UPS devices and ensuring reliable operation during power switching.
- **Solar Inverter**: In inverter applications in solar power generation systems, this MOSFET can improve the efficiency of DC to AC conversion. Its low on-resistance helps reduce power losses, thereby improving the overall conversion efficiency of the system.
- **High-performance Computing and Server Power**: In data centers and high-performance computing environments, the IPB45N06S4L-08-VB is suitable for efficient power supply and power management systems. Its high current capability and low power consumption characteristics can meet the high requirements of these systems.
**IPB45N06S4L-08-VB** MOSFET is suitable for a wide range of high-current and high-efficiency applications due to its superior performance characteristics. Whether in power management, electric vehicles, industrial motor drives, or other high-power electronic applications, it delivers superior performance and reliability.
**IPB45N06S4L-08-VB** MOSFET's ultra-low on-resistance and high current capability enable it to excel in multiple application areas:
- **Power management**: In power management modules such as DC-DC converters, power regulators, and power switches, the IPB45N06S4L-08-VB can provide efficient power conversion. Its low on-resistance helps reduce energy loss and improve overall system efficiency.
- **Electric vehicles and battery management**: This MOSFET is very useful in the battery management system (BMS) of electric vehicles, especially during battery charging and discharging. Its high current handling capability and low on-resistance can improve the overall efficiency of the battery system and extend the battery life.
- **Industrial motor drive**: In industrial motor control and drive systems, this MOSFET can effectively control the power output of the motor. Its high current carrying capacity makes it suitable for high-power motor drive applications such as automation equipment and robots.
- **Uninterruptible Power Supply (UPS)**: The IPB45N06S4L-08-VB provides stable power management in UPS systems, supporting high-power UPS devices and ensuring reliable operation during power switching.
- **Solar Inverter**: In inverter applications in solar power generation systems, this MOSFET can improve the efficiency of DC to AC conversion. Its low on-resistance helps reduce power losses, thereby improving the overall conversion efficiency of the system.
- **High-performance Computing and Server Power**: In data centers and high-performance computing environments, the IPB45N06S4L-08-VB is suitable for efficient power supply and power management systems. Its high current capability and low power consumption characteristics can meet the high requirements of these systems.
**IPB45N06S4L-08-VB** MOSFET is suitable for a wide range of high-current and high-efficiency applications due to its superior performance characteristics. Whether in power management, electric vehicles, industrial motor drives, or other high-power electronic applications, it delivers superior performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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