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IPB45N06S4-09-VB Product details
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1. IPB45N06S4-09-VB MOSFET Product Introduction
IPB45N06S4-09-VB is a high-performance N-channel power MOSFET with a TO-263 package type. It uses advanced trench technology and is designed for high current and medium voltage applications. The drain-source voltage (VDS) of this MOSFET is 60V, and the maximum continuous drain current (ID) can reach 150A. Its on-resistance (RDS(ON)) is 4mΩ, and it performs well at a gate voltage (VGS) of 10V, ensuring low power consumption and high efficiency. Its gate threshold voltage (Vth) is 3V, making it suitable for a variety of power conversion and switching applications, especially where high current handling and low power loss are required.
IPB45N06S4-09-VB is a high-performance N-channel power MOSFET with a TO-263 package type. It uses advanced trench technology and is designed for high current and medium voltage applications. The drain-source voltage (VDS) of this MOSFET is 60V, and the maximum continuous drain current (ID) can reach 150A. Its on-resistance (RDS(ON)) is 4mΩ, and it performs well at a gate voltage (VGS) of 10V, ensuring low power consumption and high efficiency. Its gate threshold voltage (Vth) is 3V, making it suitable for a variety of power conversion and switching applications, especially where high current handling and low power loss are required.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description of IPB45N06S4-09-VB MOSFET
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 150A
- **Technology type**: Trench technology
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 150A
- **Technology type**: Trench technology
Domain and module applications：
III. Application fields and module examples of IPB45N06S4-09-VB
1. **High-efficiency power management system**: The high current handling capability and low on-resistance of IPB45N06S4-09-VB make it very suitable for use in high-efficiency power management systems, including DC-DC converters and power switch modules. Its current capability of up to 150A ensures stability and reliability in high-power applications, and is suitable for computer power supplies, power conversion equipment, etc.
2. **Electric vehicle drive system**: In the motor drive system of electric vehicles, IPB45N06S4-09-VB is able to handle high currents and provide efficient power conversion and control. Its low on-resistance reduces power loss and improves the overall efficiency of the system, and is suitable for motor control and battery management systems in electric vehicles.
3. **Industrial motor drive**: In industrial motor drive modules, IPB45N06S4-09-VB can handle large current loads, ensuring the efficiency and stability of motor drive systems. Its high current capability and low power consumption make it suitable for industrial applications such as variable frequency drives and servo drives, improving the power density and efficiency of the system.
4. **High-power LED lighting**: In high-power LED lighting systems, IPB45N06S4-09-VB can be used in LED drive circuits to provide stable current drive. Its low on-resistance ensures efficient energy conversion of LEDs and reduces power loss, making it suitable for commercial lighting and industrial lighting systems.
In summary, IPB45N06S4-09-VB MOSFET is widely used in power management systems, electric vehicle drives, motor drives, and high-power LED lighting due to its high current handling capability, low on-resistance, and medium voltage range, providing efficient and stable power management and conversion solutions.
1. **High-efficiency power management system**: The high current handling capability and low on-resistance of IPB45N06S4-09-VB make it very suitable for use in high-efficiency power management systems, including DC-DC converters and power switch modules. Its current capability of up to 150A ensures stability and reliability in high-power applications, and is suitable for computer power supplies, power conversion equipment, etc.
2. **Electric vehicle drive system**: In the motor drive system of electric vehicles, IPB45N06S4-09-VB is able to handle high currents and provide efficient power conversion and control. Its low on-resistance reduces power loss and improves the overall efficiency of the system, and is suitable for motor control and battery management systems in electric vehicles.
3. **Industrial motor drive**: In industrial motor drive modules, IPB45N06S4-09-VB can handle large current loads, ensuring the efficiency and stability of motor drive systems. Its high current capability and low power consumption make it suitable for industrial applications such as variable frequency drives and servo drives, improving the power density and efficiency of the system.
4. **High-power LED lighting**: In high-power LED lighting systems, IPB45N06S4-09-VB can be used in LED drive circuits to provide stable current drive. Its low on-resistance ensures efficient energy conversion of LEDs and reduces power loss, making it suitable for commercial lighting and industrial lighting systems.
In summary, IPB45N06S4-09-VB MOSFET is widely used in power management systems, electric vehicle drives, motor drives, and high-power LED lighting due to its high current handling capability, low on-resistance, and medium voltage range, providing efficient and stable power management and conversion solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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