Featured Model

IPB45N06S3L-13-VB Product details

Product introduction:

IPB45N06S3L-13-VB Product Introduction

IPB45N06S3L-13-VB is a high-performance N-type power MOSFET in TO263 package, designed for high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, the gate-source voltage (VGS) is ±20V, and the threshold voltage is 1.7V. Based on Trench technology, it provides excellent on-resistance performance. At VGS=4.5V, the on-resistance is 12mΩ, and at VGS=10V it is 11mΩ, supporting a maximum drain current of 75A. These features enable IPB45N06S3L-13-VB to excel in high-power switching and power management systems.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 1.7V 75A 11mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 1.7V 75A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 1.7V 75A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
IPB45N06S3L-13-VB Parameter Description

- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ@VGS=4.5V
- 11mΩ@VGS=10V
- **Drain current (ID)**: 75A
- **Technology**: Trench technology

Domain and module applications:

Applications and modules of IPB45N06S3L-13-VB

1. **Power management**: IPB45N06S3L-13-VB is very efficient in power management applications, especially in DC-DC converters and high-efficiency switching power modules. Its low on-resistance reduces power losses and improves the overall efficiency of the power supply, making it suitable for power systems that require high performance and stability.

2. **Power tools**: In power tools, this MOSFET can be used in motor drive and power switching applications. Its high current handling capability and low on-resistance enable it to cope with high power demands and improve the overall performance and reliability of the tool.

3. **Automotive electronics**: IPB45N06S3L-13-VB is also suitable for automotive electronic systems, such as on-board chargers, motor controls, and power switching modules. Its high current handling capability and low on-resistance help improve the performance and energy efficiency of automotive electronic systems, especially in high-power switching applications.

4. **LED Driver**: This MOSFET is suitable for high-power LED applications in LED drivers. Its low on-resistance and high current capability support efficient driving of LED lamps, ensuring stable light output and long life, suitable for various lighting systems.

5. **Battery Management System**: In the battery management system, IPB45N06S3L-13-VB can be used as a power switch module to optimize the battery charging and discharging process. Its low on-resistance helps reduce energy loss, improve system efficiency, and extend battery life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat