IPB45N06S3-16-VB Product details
Product introduction:
IPB45N06S3-16-VB is a high-performance N-channel MOSFET provided by Infineon and packaged in TO263. This MOSFET uses Trench technology and is designed for high-efficiency, high-power density applications. Its maximum drain-source voltage (VDS) is 60V, the gate-source voltage (VGS) tolerance is ±20V, and the threshold voltage (Vth) is 1.7V. The on-resistance (RDS(ON)) of the MOSFET is 11mΩ at VGS=10V, and the maximum drain current (ID) can reach 75A. This MOSFET is suitable for power management, electric vehicles, and industrial electrical applications that require high current and low on-resistance.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology type**: Trench
Domain and module applications:
1. **Power management system**:
IPB45N06S3-16-VB performs well in power management systems, especially in DC-DC converters. The low on-resistance and high current carrying capacity of this MOSFET enable it to handle current efficiently and effectively reduce power loss, improving the energy efficiency of the system. In high-performance power supply systems, this MOSFET can stabilize the output and ensure efficient operation of the system.
2. **Electric vehicles and battery management**:
In the battery management system of electric vehicles, IPB45N06S3-16-VB provides reliable high current handling capabilities. Its low on-resistance can reduce power loss in the battery management system and improve the efficiency and life of the overall battery. In addition, in the motor drive module of electric vehicles, this MOSFET can handle high power requirements and ensure smooth motor control.
3. **Industrial electrical control**:
In industrial automation and electrical control systems, the IPB45N06S3-16-VB is suitable for power switching and load control of various industrial equipment due to its high current carrying capacity and low on-resistance. For example, it can be used in power management of motor drives, power control modules and automation equipment to improve system reliability and efficiency.
4. **Consumer electronics and computer equipment**:
This MOSFET is also suitable for power management and power switching modules in consumer electronics and computer equipment. In these applications, the IPB45N06S3-16-VB is able to handle high current loads and provide a stable power supply, while its low on-resistance reduces power consumption and heat generation, thereby improving the overall performance and reliability of the equipment.
In summary, the IPB45N06S3-16-VB provides an ideal solution for power management, electric vehicles, electrical control and consumer electronics with its high current handling capability, low on-resistance and high efficiency.
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