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IPB45N04S4L-08-VB Product details
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Product Introduction
**IPB45N04S4L-08-VB** is a high-performance N-Channel MOSFET in TO263 package, manufactured based on advanced Trench technology. This MOSFET provides a maximum drain-source voltage of 40V and a continuous current handling capability of up to 100A, with excellent switching performance and low on-resistance. At VGS=10V, its on-resistance is only 5mΩ, suitable for use in high current and high power applications. Its design makes it perform well in power management and high power switching applications.
**IPB45N04S4L-08-VB** is a high-performance N-Channel MOSFET in TO263 package, manufactured based on advanced Trench technology. This MOSFET provides a maximum drain-source voltage of 40V and a continuous current handling capability of up to 100A, with excellent switching performance and low on-resistance. At VGS=10V, its on-resistance is only 5mΩ, suitable for use in high current and high power applications. Its design makes it perform well in power management and high power switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 100A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management system**:
**IPB45N04S4L-08-VB** is very suitable for DC-DC converters and power switch modules in power management systems due to its high current capability and low on-resistance. In these applications, this MOSFET can significantly improve power conversion efficiency, reduce switching losses, and can handle high current loads to ensure system stability and reliability.
2. **Electric vehicles**:
In the field of electric vehicles, this MOSFET is suitable for motor drive systems and battery management systems. Its high current handling capability and low RDS(ON) can effectively manage high power currents in electric vehicles, improve power transmission efficiency, and improve the power performance and endurance of the vehicle.
3. **Industrial automation**:
In industrial automation applications, **IPB45N04S4L-08-VB** can be used to drive high-power motors and control high-power devices. Its high current capability and low on-resistance help improve the system's power efficiency, reduce energy consumption, and provide stable performance in industrial environments, making it suitable for control systems that require high reliability.
4. **High-power switching applications**:
This MOSFET is also suitable for high-power switching applications such as power switching and load switching. Due to its low RDS(ON) and high current capability, **IPB45N04S4L-08-VB** can effectively reduce switching losses, ensure efficient and reliable switching operations, and is widely used in high-power power management and power amplifier modules.
1. **Power management system**:
**IPB45N04S4L-08-VB** is very suitable for DC-DC converters and power switch modules in power management systems due to its high current capability and low on-resistance. In these applications, this MOSFET can significantly improve power conversion efficiency, reduce switching losses, and can handle high current loads to ensure system stability and reliability.
2. **Electric vehicles**:
In the field of electric vehicles, this MOSFET is suitable for motor drive systems and battery management systems. Its high current handling capability and low RDS(ON) can effectively manage high power currents in electric vehicles, improve power transmission efficiency, and improve the power performance and endurance of the vehicle.
3. **Industrial automation**:
In industrial automation applications, **IPB45N04S4L-08-VB** can be used to drive high-power motors and control high-power devices. Its high current capability and low on-resistance help improve the system's power efficiency, reduce energy consumption, and provide stable performance in industrial environments, making it suitable for control systems that require high reliability.
4. **High-power switching applications**:
This MOSFET is also suitable for high-power switching applications such as power switching and load switching. Due to its low RDS(ON) and high current capability, **IPB45N04S4L-08-VB** can effectively reduce switching losses, ensure efficient and reliable switching operations, and is widely used in high-power power management and power amplifier modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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