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IPB320N20N3 G-VB Product details
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IPB320N20N3 G-VB Product Introduction
IPB320N20N3 G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for applications requiring high voltage and high current handling capabilities. This MOSFET uses advanced Trench technology to provide stable performance and excellent switching characteristics. It can withstand drain-source voltages up to 200V and has a maximum drain current capability of 40A, suitable for a variety of high voltage and high power applications.
IPB320N20N3 G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for applications requiring high voltage and high current handling capabilities. This MOSFET uses advanced Trench technology to provide stable performance and excellent switching characteristics. It can withstand drain-source voltages up to 200V and has a maximum drain current capability of 40A, suitable for a variety of high voltage and high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IPB320N20N3 G-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench technology
Domain and module applications：
Applications and Module Examples
1. **Power Converters**: The IPB320N20N3 G-VB is suitable for high voltage DC-DC converters and power management modules. Its high voltage withstand capability and low on-resistance enable it to effectively handle currents in high power and high voltage environments, ensuring high efficiency and stability during power conversion.
2. **Industrial Power Control**: In industrial power control applications, such as high voltage motor drives and high power load control systems, the IPB320N20N3 G-VB can stably handle high currents and high voltages, provide reliable switching control, and ensure safe operation and high efficiency of the system.
3. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: This MOSFET can be used in battery management systems (BMS) and motor control modules in electric vehicles. Its high voltage withstand capability and high current handling capability make it suitable for battery current monitoring and motor drive control, helping to improve the safety and performance of electric vehicles.
4. **Inverter system**: IPB320N20N3 G-VB is also suitable for power conversion modules in photovoltaic inverters and wind power generation systems. Its high voltage and high current handling capabilities can effectively cope with the high power conversion requirements in renewable energy systems and improve the energy efficiency and reliability of the system.
In summary, IPB320N20N3 G-VB is a high-performance MOSFET suitable for high voltage and high current applications. With its excellent switching characteristics and reliable electrical performance, it is widely used in power conversion, industrial power control, electric vehicles, inverter systems and other fields.
1. **Power Converters**: The IPB320N20N3 G-VB is suitable for high voltage DC-DC converters and power management modules. Its high voltage withstand capability and low on-resistance enable it to effectively handle currents in high power and high voltage environments, ensuring high efficiency and stability during power conversion.
2. **Industrial Power Control**: In industrial power control applications, such as high voltage motor drives and high power load control systems, the IPB320N20N3 G-VB can stably handle high currents and high voltages, provide reliable switching control, and ensure safe operation and high efficiency of the system.
3. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: This MOSFET can be used in battery management systems (BMS) and motor control modules in electric vehicles. Its high voltage withstand capability and high current handling capability make it suitable for battery current monitoring and motor drive control, helping to improve the safety and performance of electric vehicles.
4. **Inverter system**: IPB320N20N3 G-VB is also suitable for power conversion modules in photovoltaic inverters and wind power generation systems. Its high voltage and high current handling capabilities can effectively cope with the high power conversion requirements in renewable energy systems and improve the energy efficiency and reliability of the system.
In summary, IPB320N20N3 G-VB is a high-performance MOSFET suitable for high voltage and high current applications. With its excellent switching characteristics and reliable electrical performance, it is widely used in power conversion, industrial power control, electric vehicles, inverter systems and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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