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IPB26CNE8N G-VB Product details
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Product Introduction
IPB26CNE8N G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and medium voltage applications. Its maximum drain-source voltage (VDS) is 80V and its maximum on-current (ID) is 120A. The on-resistance of this MOSFET is 10mΩ at a gate drive voltage of 4.5V and 6mΩ at 10V, providing excellent low power consumption characteristics. It uses advanced trench technology (Trench) to improve switching efficiency and reduce power loss, and is suitable for a variety of high-efficiency power control and management applications.
IPB26CNE8N G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and medium voltage applications. Its maximum drain-source voltage (VDS) is 80V and its maximum on-current (ID) is 120A. The on-resistance of this MOSFET is 10mΩ at a gate drive voltage of 4.5V and 6mΩ at 10V, providing excellent low power consumption characteristics. It uses advanced trench technology (Trench) to improve switching efficiency and reduce power loss, and is suitable for a variety of high-efficiency power control and management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 10mΩ
- @ VGS = 10V: 6mΩ
- **Maximum on-current (ID)**: 120A
- **Technology type**: Trench
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 10mΩ
- @ VGS = 10V: 6mΩ
- **Maximum on-current (ID)**: 120A
- **Technology type**: Trench
Domain and module applications：
Application fields and module examples: The high current handling capability and low on-resistance of the IPB26CNE8N G-VB MOSFET enable it to excel in multiple fields and modules. First, in the battery management system (BMS) of electric vehicles, this MOSFET can efficiently control the current to ensure the safety and performance of the battery while reducing power consumption and heat. Secondly, in the switching power supply (SMPS) application, it can effectively handle high current loads and provide stable power output while reducing power loss and improving system efficiency. In addition, in DC-DC converters, the low on-resistance of the IPB26CNE8N G-VB can reduce energy loss and improve power conversion efficiency. In motor drives and high-efficiency power modules, this MOSFET also performs well, providing reliable performance for a variety of high-current and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
