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IPB25N06S3L-22-VB Product details
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Product Introduction:
IPB25N06S3L-22-VB is a high-performance N-channel MOSFET in TO263 package, designed for medium and high voltage and high current applications. Its drain-source voltage (VDS) reaches 60V and the drain current (ID) can reach 75A. The on-resistance (RDS(ON)) of this MOSFET is 11mΩ when VGS is 10V, and it has excellent low conduction loss performance. IPB25N06S3L-22-VB uses Trench technology to provide efficient switching performance and low power consumption, which is very suitable for electronic applications that require high current handling and low switching losses.
IPB25N06S3L-22-VB is a high-performance N-channel MOSFET in TO263 package, designed for medium and high voltage and high current applications. Its drain-source voltage (VDS) reaches 60V and the drain current (ID) can reach 75A. The on-resistance (RDS(ON)) of this MOSFET is 11mΩ when VGS is 10V, and it has excellent low conduction loss performance. IPB25N06S3L-22-VB uses Trench technology to provide efficient switching performance and low power consumption, which is very suitable for electronic applications that require high current handling and low switching losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Drain current (ID)**: 75A
- **Technology**: Trench technology, providing low on-resistance and high switching speed
- **Thermal resistance (Rth(ja))**: Typical value is about 62 K/W
- **Junction temperature range**: -55°C to +175°C
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Drain current (ID)**: 75A
- **Technology**: Trench technology, providing low on-resistance and high switching speed
- **Thermal resistance (Rth(ja))**: Typical value is about 62 K/W
- **Junction temperature range**: -55°C to +175°C
Domain and module applications：
Applicable fields and module applications:
1. **Power management**: IPB25N06S3L-22-VB performs well in high-efficiency power management modules, especially in DC-DC converters (DC-DC) and power regulators. Its low on-resistance and high current capability enable it to reduce energy loss and improve system efficiency, and is suitable for various power management systems that require high power and high efficiency.
2. **Electric vehicle (EV) charging system**: In the charging system of electric vehicles, this MOSFET is suitable for chargers and battery management systems (BMS) due to its high current carrying capacity and low conduction loss. It can effectively manage power conversion and current control during the charging process to ensure system stability and efficiency.
3. **Motor drive**: IPB25N06S3L-22-VB is suitable for industrial motor drive applications such as inverters and servo drive systems. Its high current handling capability and low power consumption characteristics help improve the overall performance and energy efficiency of motor drive systems, and are suitable for motor control applications that require high current and high efficiency.
4. **LED lighting**: In high-power LED lighting modules, this MOSFET can be used as a switching element to control the current and power output of the LED. Its low on-resistance helps reduce heat generation and improve the efficiency and reliability of the LED system.
5. **Automotive electronics**: In automotive electronic devices, such as motor controllers and switching power supplies, the characteristics of this MOSFET make it suitable for high current and high voltage applications. Its low on-resistance and high current capability ensure the stability and high efficiency of automotive electronic systems.
IPB25N06S3L-22-VB plays an important role in a variety of electronic modules and systems with its excellent performance and flexible application range, especially in application scenarios requiring high current, high efficiency and low switching losses.
1. **Power management**: IPB25N06S3L-22-VB performs well in high-efficiency power management modules, especially in DC-DC converters (DC-DC) and power regulators. Its low on-resistance and high current capability enable it to reduce energy loss and improve system efficiency, and is suitable for various power management systems that require high power and high efficiency.
2. **Electric vehicle (EV) charging system**: In the charging system of electric vehicles, this MOSFET is suitable for chargers and battery management systems (BMS) due to its high current carrying capacity and low conduction loss. It can effectively manage power conversion and current control during the charging process to ensure system stability and efficiency.
3. **Motor drive**: IPB25N06S3L-22-VB is suitable for industrial motor drive applications such as inverters and servo drive systems. Its high current handling capability and low power consumption characteristics help improve the overall performance and energy efficiency of motor drive systems, and are suitable for motor control applications that require high current and high efficiency.
4. **LED lighting**: In high-power LED lighting modules, this MOSFET can be used as a switching element to control the current and power output of the LED. Its low on-resistance helps reduce heat generation and improve the efficiency and reliability of the LED system.
5. **Automotive electronics**: In automotive electronic devices, such as motor controllers and switching power supplies, the characteristics of this MOSFET make it suitable for high current and high voltage applications. Its low on-resistance and high current capability ensure the stability and high efficiency of automotive electronic systems.
IPB25N06S3L-22-VB plays an important role in a variety of electronic modules and systems with its excellent performance and flexible application range, especially in application scenarios requiring high current, high efficiency and low switching losses.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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