IPB230N06L3 G-VB Product details
Product introduction:
IPB230N06L3 G-VB is a high-performance N-channel power MOSFET in TO-263 package, designed for high current and medium voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, supporting a continuous drain current of up to 50A, suitable for stable operation in high current environments. Its gate threshold voltage (Vth) is 1.7V, ensuring high efficiency at low gate drive voltage. The on-resistance (RDS(ON)) is 35mΩ and 32mΩ respectively, which performs well under different gate voltages. It uses advanced trench technology (Trench), which enables it to have lower power consumption and high efficiency in power conversion and switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 50A
- **Technology type**: Trench technology
Domain and module applications:
1. **Power management system**: IPB230N06L3 G-VB can be used in DC-DC converters and power switch modules in power management systems. Due to its high current carrying capacity and medium voltage range, it can efficiently manage the power flow during power conversion and has low power consumption, which is suitable for computer power supply, industrial power supply and other occasions.
2. **Power tools and home appliances**: In the drive circuits of power tools and home appliances, IPB230N06L3 G-VB can effectively handle high current loads and provide stable power support. Its low on-resistance and high current capability make it very suitable for motor control of power tools and switching circuits of home appliances.
3. **LED drive circuit**: In high-power LED lighting systems, IPB230N06L3 G-VB can be used in LED drive circuits to drive LED light sources efficiently and stably. Its low on-resistance ensures efficient energy conversion and low power loss of LEDs, suitable for applications such as commercial lighting and industrial lighting.
4. **Automotive Electronics**: IPB230N06L3 G-VB is also widely used in automotive electronic systems, such as power windows, seat adjustment and on-board power management. Its high current capability and medium voltage range can meet the power requirements of automotive electronic equipment and ensure stable and reliable operation.
In summary, IPB230N06L3 G-VB MOSFET is widely used in power management systems, power tools and home appliances, LED drive circuits and automotive electronic equipment due to its high current handling capability, moderate voltage range and low on-resistance, providing efficient and reliable power management solutions for these applications.
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