IPB200N15N3G-VB Product details
Product introduction:
IPB200N15N3G-VB is a high-performance N-channel MOSFET launched by Infineon, packaged in TO263. This MOSFET is designed for high-voltage and high-current applications, with a maximum drain-source voltage (VDS) of 150V and a gate-source voltage (VGS) tolerance of ±20V. Its threshold voltage (Vth) is 3V, and the maximum drain current (ID) can reach 75A. The on-resistance (RDS(ON)) of IPB200N15N3G-VB is 18mΩ at VGS=10V, and it uses advanced Trench technology to provide excellent switching performance and high efficiency. This MOSFET is suitable for handling high-power, high-voltage applications, meeting the needs of industrial, automotive, and power management fields.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 75A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 150V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology type**: Trench
Domain and module applications:
1. **High voltage power management**:
IPB200N15N3G-VB is suitable for high voltage power management systems, such as high voltage DC-DC converters and power distribution systems. Its high voltage tolerance and low on-resistance enable it to perform well in high power power systems, effectively improving energy efficiency and stability. This makes it an ideal choice for industrial power supplies, data center power supplies, and uninterruptible power supply (UPS) systems.
2. **Automotive electronic systems**:
In automotive electronic systems, such as battery management and motor drive systems for electric vehicles, IPB200N15N3G-VB provides high voltage and high current handling capabilities. Its low on-resistance ensures high efficiency and long life under high power operation, meeting the requirements of automotive electronics for high reliability and high efficiency, especially in battery management and motor control modules.
3. **Industrial motor control**:
This MOSFET is also widely used in industrial motor control and automation equipment. Its high voltage and high current carrying capacity make it suitable for motor drive, power control and automation systems, providing stable power output and efficient power management, improving the performance and reliability of industrial equipment.
4. **New Energy Applications**:
In the field of new energy, IPB200N15N3G-VB can be used in solar inverters and wind power generation systems. Its high voltage tolerance and high efficiency characteristics enable it to maintain efficient and stable performance when handling high power loads in new energy systems, ensuring power conversion and system reliability.
In short, IPB200N15N3G-VB provides a reliable solution for high power and high voltage applications through its high voltage, high current handling capability and low on-resistance, and is widely used in power management, electric vehicles, industrial control and new energy and other fields.
Technical support:
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