中文
English
IPB200N15N3 G-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**IPB200N15N3 G-VB** is a high-performance single N-Channel MOSFET in TO263 package, based on Trench technology, with high efficiency and low conduction loss. This MOSFET has a maximum drain-source voltage (VDS) of 150V and a current handling capacity of 128A. At the same time, the on-resistance is only 7.5mΩ when VGS=10V, making it suitable for high-voltage, high-current power transmission and switching applications, such as industrial automation, electric vehicles, and high-power DC-DC converters.
**IPB200N15N3 G-VB** is a high-performance single N-Channel MOSFET in TO263 package, based on Trench technology, with high efficiency and low conduction loss. This MOSFET has a maximum drain-source voltage (VDS) of 150V and a current handling capacity of 128A. At the same time, the on-resistance is only 7.5mΩ when VGS=10V, making it suitable for high-voltage, high-current power transmission and switching applications, such as industrial automation, electric vehicles, and high-power DC-DC converters.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 128A | 7.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 128A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 128A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 150V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7.5mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 128A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 150V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7.5mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 128A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Electric Vehicle (EV) Power Management**:
**IPB200N15N3 G-VB**'s high current and high voltage handling capabilities make it widely used in the field of electric vehicles, especially for motor drives and battery management systems. Its low on-resistance and high efficiency can significantly reduce energy consumption during high-power power transmission and conversion, improving the vehicle's endurance and overall energy efficiency.
2. **Industrial Automation Equipment**:
In the field of industrial automation, this MOSFET is suitable for driving high-power motors and controlling industrial equipment. Its high voltage resistance and low loss characteristics enable it to operate stably under high voltage and high current conditions, helping to improve the efficiency and reliability of industrial automation systems and ensure the stable performance of equipment in harsh environments.
3. **High-power DC-DC Converters**:
**IPB200N15N3 G-VB** performs well in DC-DC converters due to its high voltage tolerance and low RDS(ON). It can significantly reduce switching losses and improve conversion efficiency, and is suitable for power modules and devices that require high power handling, especially in communication equipment, power systems, and servers.
4. **Power switches and power amplifiers**:
This MOSFET is also very suitable for high-power power switches and power amplifier applications. Its high current handling capability and low on-resistance ensure low losses and high efficiency in high-power switching operations, reduce heat generation, and thus improve the stability and performance of the overall system.
1. **Electric Vehicle (EV) Power Management**:
**IPB200N15N3 G-VB**'s high current and high voltage handling capabilities make it widely used in the field of electric vehicles, especially for motor drives and battery management systems. Its low on-resistance and high efficiency can significantly reduce energy consumption during high-power power transmission and conversion, improving the vehicle's endurance and overall energy efficiency.
2. **Industrial Automation Equipment**:
In the field of industrial automation, this MOSFET is suitable for driving high-power motors and controlling industrial equipment. Its high voltage resistance and low loss characteristics enable it to operate stably under high voltage and high current conditions, helping to improve the efficiency and reliability of industrial automation systems and ensure the stable performance of equipment in harsh environments.
3. **High-power DC-DC Converters**:
**IPB200N15N3 G-VB** performs well in DC-DC converters due to its high voltage tolerance and low RDS(ON). It can significantly reduce switching losses and improve conversion efficiency, and is suitable for power modules and devices that require high power handling, especially in communication equipment, power systems, and servers.
4. **Power switches and power amplifiers**:
This MOSFET is also very suitable for high-power power switches and power amplifier applications. Its high current handling capability and low on-resistance ensure low losses and high efficiency in high-power switching operations, reduce heat generation, and thus improve the stability and performance of the overall system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
