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IPB180N04S4-H0-VB Product details
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IPB180N04S4-H0-VB is a single N-channel MOSFET in TO263 package, suitable for high current and low on-resistance applications. Its maximum drain-source voltage (VDS) is 40V, the drain current (ID) is up to 280A, and the on-resistance (RDS(ON)) is only 1.4mΩ at VGS=10V. This MOSFET uses advanced Trench technology, has low switching losses and extremely high current handling capabilities, and is suitable for applications such as efficient power management and high power conversion.
**IPB180N04S4-H0-VB
IPB180N04S4-H0-VB is a single N-channel MOSFET in TO263 package, suitable for high current and low on-resistance applications. Its maximum drain-source voltage (VDS) is 40V, the drain current (ID) is up to 280A, and the on-resistance (RDS(ON)) is only 1.4mΩ at VGS=10V. This MOSFET uses advanced Trench technology, has low switching losses and extremely high current handling capabilities, and is suitable for applications such as efficient power management and high power conversion.
**IPB180N04S4-H0-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
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- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage(VDS)**: 40V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 3V
- **On-resistance(RDS(ON))**: 1.68mΩ @ VGS=4.5V, 1.4mΩ @ VGS=10V
- **Drain current(ID)**: 280A
- **Technology**: Trench
**
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage(VDS)**: 40V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 3V
- **On-resistance(RDS(ON))**: 1.68mΩ @ VGS=4.5V, 1.4mΩ @ VGS=10V
- **Drain current(ID)**: 280A
- **Technology**: Trench
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Domain and module applications：
1. **High-efficiency power management systems**
The IPB180N04S4-H0-VB is ideal for high-efficiency power management applications such as server power supplies, power modules for data centers, etc. Its low on-resistance and high current capability can improve the efficiency of power conversion, reduce system energy loss, and ensure reliable operation of high-power devices.
2. **Automotive electronics and electric vehicles (EV)**
In automotive electronics and electric vehicle applications, especially battery management systems and drive modules, this MOSFET can be used to handle high current switching operations. Its 280A current handling capability and low loss characteristics make it an ideal choice for systems such as electric vehicle chargers, drive motors and inverters, improving system efficiency and reducing heat loss.
3. **Industrial motor drive and control systems**
The high current capability and fast switching performance of this MOSFET make it suitable for industrial motor drive and control systems that require high power and high efficiency. Whether driving high-power motors in industrial automation equipment or in inverters and motor control modules, this MOSFET ensures stable and efficient operation of the system.
4. **Renewable Energy Systems**
IPB180N04S4-H0-VB is suitable for power conversion modules in renewable energy fields such as wind and solar energy, especially inverter applications. It can handle high currents while maintaining low conduction losses, improve the efficiency of energy conversion and the overall performance of the system, and ensure the efficient operation of renewable energy systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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