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IPB180N04S4-01-VB Product details
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IPB180N04S4-01-VB Product Introduction
IPB180N04S4-01-VB is a high-performance single N-channel MOSFET in TO263 package with excellent on-resistance and high current handling capability, suitable for a variety of high-power applications. This MOSFET adopts advanced Trench technology, with extremely low on-resistance (RDS(ON)) and fast switching characteristics, which can meet the needs of high-efficiency power conversion and power management. Its maximum drain current can reach 280A, and it can withstand drain-source voltage up to 40V, which is very suitable for applications requiring high current handling capability and high efficiency.
IPB180N04S4-01-VB is a high-performance single N-channel MOSFET in TO263 package with excellent on-resistance and high current handling capability, suitable for a variety of high-power applications. This MOSFET adopts advanced Trench technology, with extremely low on-resistance (RDS(ON)) and fast switching characteristics, which can meet the needs of high-efficiency power conversion and power management. Its maximum drain current can reach 280A, and it can withstand drain-source voltage up to 40V, which is very suitable for applications requiring high current handling capability and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IPB180N04S4-01-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1.68mΩ @ VGS=4.5V; 1.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 280A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1.68mΩ @ VGS=4.5V; 1.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 280A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **High-efficiency power conversion system**: IPB180N04S4-01-VB is suitable for power conversion modules such as high-power DC-DC converters and server power supplies. Its extremely low on-resistance enables it to reduce power loss and improve power conversion efficiency. It is particularly suitable for use in high-performance computing platforms such as data centers and cloud computing servers.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: This MOSFET can be used in motor drive controllers and battery management systems (BMS) in electric vehicles. Its high current carrying capacity and low RDS(ON) characteristics ensure that the power system of electric vehicles operates efficiently while maintaining low energy loss, thereby improving endurance and overall efficiency.
3. **Industrial Power Management**: IPB180N04S4-01-VB is very suitable for use in industrial power management systems, such as inverters for renewable energy power generation and high-power drive modules in industrial automation systems. The device can effectively cope with high current and high-frequency switching requirements, improving the durability and stability of the system.
4. **Communication Equipment and Base Stations**: Due to its high power handling capability, this MOSFET can be used in the power supply and load management modules of communication base stations to help reduce heat and energy consumption, and ensure the stability and reliability of the equipment during long-term operation.
As an efficient and reliable MOSFET device, IPB180N04S4-01-VB can play a key role in high-current and high-efficiency applications, especially in power management and high-power processing related scenarios.
1. **High-efficiency power conversion system**: IPB180N04S4-01-VB is suitable for power conversion modules such as high-power DC-DC converters and server power supplies. Its extremely low on-resistance enables it to reduce power loss and improve power conversion efficiency. It is particularly suitable for use in high-performance computing platforms such as data centers and cloud computing servers.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: This MOSFET can be used in motor drive controllers and battery management systems (BMS) in electric vehicles. Its high current carrying capacity and low RDS(ON) characteristics ensure that the power system of electric vehicles operates efficiently while maintaining low energy loss, thereby improving endurance and overall efficiency.
3. **Industrial Power Management**: IPB180N04S4-01-VB is very suitable for use in industrial power management systems, such as inverters for renewable energy power generation and high-power drive modules in industrial automation systems. The device can effectively cope with high current and high-frequency switching requirements, improving the durability and stability of the system.
4. **Communication Equipment and Base Stations**: Due to its high power handling capability, this MOSFET can be used in the power supply and load management modules of communication base stations to help reduce heat and energy consumption, and ensure the stability and reliability of the equipment during long-term operation.
As an efficient and reliable MOSFET device, IPB180N04S4-01-VB can play a key role in high-current and high-efficiency applications, especially in power management and high-power processing related scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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