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IPB180N04S4-00-VB Product details
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Product Introduction
IPB180N04S4-00-VB is a high-performance single N-channel MOSFET in TO263 package with a maximum drain-source voltage (VDS) of 40V and a maximum on-current (ID) of 280A. The on-resistance of this device is 1.68mΩ at a gate drive voltage of 4.5V and 1.4mΩ at 10V, showing its excellent low-loss performance. This MOSFET adopts advanced trench technology and is suitable for a variety of high-current and high-efficiency applications. It excels in switching performance and power handling, and is very suitable for applications with stringent requirements on conduction losses.
IPB180N04S4-00-VB is a high-performance single N-channel MOSFET in TO263 package with a maximum drain-source voltage (VDS) of 40V and a maximum on-current (ID) of 280A. The on-resistance of this device is 1.68mΩ at a gate drive voltage of 4.5V and 1.4mΩ at 10V, showing its excellent low-loss performance. This MOSFET adopts advanced trench technology and is suitable for a variety of high-current and high-efficiency applications. It excels in switching performance and power handling, and is very suitable for applications with stringent requirements on conduction losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 1.68mΩ
- @ VGS = 10V: 1.4mΩ
- **Maximum on-current (ID)**: 280A
- **Technology type**: Trench
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 1.68mΩ
- @ VGS = 10V: 1.4mΩ
- **Maximum on-current (ID)**: 280A
- **Technology type**: Trench
Domain and module applications：
Application areas and module examples: IPB180N04S4-00-VB MOSFET's high current carrying capacity and extremely low on-resistance make it particularly suitable for high-efficiency power conversion applications. In **electric vehicle power systems** and **battery management systems (BMS), it can provide stable power output and extremely low energy loss under high current conditions, improving the overall efficiency of the system. In addition, in **server power supplies and data center equipment**, it can effectively handle high currents, reduce heat and power consumption, and is very suitable for high-efficiency power management modules. Its superior switching characteristics make it also perform well in applications such as **DC-DC converters (DC-DC converters)** and **switching power supplies (SMPS), helping to reduce conduction losses and improve system efficiency. In scenarios with high power and high current requirements, IPB180N04S4-00-VB is an ideal choice.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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