IPB180N04S3-02-VB Product details
Product introduction:
IPB180N04S3-02-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. Its drain-source voltage (VDS) is 40V, gate voltage (VGS) is ±20V, and turn-on voltage (Vth) is 3V. It has extremely low on-resistance (RDS(ON)), which is 1.68mΩ at VGS=4.5V and 1.4mΩ at VGS=10V. The device is capable of carrying a drain current of up to 280A and uses advanced Trench technology to provide excellent conductivity and efficient switching performance. It is suitable for a variety of high-power and low-loss application environments, such as power tools, automotive electronics, and high-efficiency power management systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 1.68mΩ @ VGS=4.5V
- 1.4mΩ @ VGS=10V
- **Drain current (ID)**: 280A
- **Technology**: Trench technology
Domain and module applications:
1. **Power tools and industrial motor drives**: IPB180N04S3-02-VB is suitable for power tools and industrial motor drive modules that need to handle high currents. Its high current handling capability and low on-resistance ensure the stability and efficiency of the equipment under high loads and reduce energy loss.
2. **Automotive electronics**: This MOSFET is particularly suitable for power distribution, load switching and motor drive applications in automotive electronic systems. Its 40V withstand voltage and 280A current capability make it outstanding in electric vehicles and hybrid systems that require high power processing.
3. **Power management system**: In DC-DC converters and switching power supply modules, IPB180N04S3-02-VB can provide efficient energy transmission and reduce power loss through its low RDS(ON), and provide excellent performance in power regulation and conversion modules.
4. **Switch Mode Power Supply (SMPS)**: This device plays an important role in high-efficiency switching power supplies. It can handle high currents and maintain extremely low power consumption. It is suitable for power systems in data centers and communication base stations.
5. **Load Switch and Protection Circuit**: This MOSFET can switch large currents at low on-resistance. It is suitable for use in load switches and power protection modules. It can effectively prevent overcurrent and short circuit conditions to ensure the safety and reliability of the circuit.
IPB180N04S3-02-VB is a powerful MOSFET that performs well in applications that require high current and efficient energy conversion. It is suitable for high-efficiency and low-loss circuit design in a variety of industrial, automotive, and power management modules.
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