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IPB180N03S4L-H0-VB Product details
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Product Introduction:
IPB180N03S4L-H0-VB is a dual N-channel MOSFET (Dual-N+N-Channel) in TO263-7L package. It is designed specifically for low voltage, high current applications, with low on-resistance (RDS(ON)) and extremely high current carrying capacity. This MOSFET supports a drain-source voltage (VDS) of 40V, and has an on-resistance of only 1mΩ when the gate-source voltage (VGS) is 10V, and a drain current of up to 200A. IPB180N03S4L-H0-VB uses advanced Trench technology to provide extremely low switching losses and efficient current transmission capabilities, making it very suitable for high power density and high-efficiency application scenarios.
IPB180N03S4L-H0-VB is a dual N-channel MOSFET (Dual-N+N-Channel) in TO263-7L package. It is designed specifically for low voltage, high current applications, with low on-resistance (RDS(ON)) and extremely high current carrying capacity. This MOSFET supports a drain-source voltage (VDS) of 40V, and has an on-resistance of only 1mΩ when the gate-source voltage (VGS) is 10V, and a drain current of up to 200A. IPB180N03S4L-H0-VB uses advanced Trench technology to provide extremely low switching losses and efficient current transmission capabilities, making it very suitable for high power density and high-efficiency application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
Detailed parameter description:
- **Package type**: TO263-7L
- **Configuration**: Dual-N+N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 1mΩ @ VGS=10V
- **Drain current (ID)**: 200A
- **Technology**: Trench technology, providing lower on-resistance and higher switching efficiency
- **Thermal resistance (Rth(ja))**: Typical value is about 62 K/W
- **Junction temperature range**: -55°C to +175°C
- **Package type**: TO263-7L
- **Configuration**: Dual-N+N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 1mΩ @ VGS=10V
- **Drain current (ID)**: 200A
- **Technology**: Trench technology, providing lower on-resistance and higher switching efficiency
- **Thermal resistance (Rth(ja))**: Typical value is about 62 K/W
- **Junction temperature range**: -55°C to +175°C
Domain and module applications：
Applicable fields and module applications:
1. **High-efficiency power management module**: IPB180N03S4L-H0-VB is widely used in high-efficiency power management modules, especially DC-DC converters (DC-DC) and uninterruptible power supply (UPS) systems that require low loss and high efficiency. Its low on-resistance helps reduce switching losses and significantly improves energy conversion efficiency.
2. **Power tools and battery-powered devices**: This MOSFET is very suitable for use in power tools and other battery-powered devices, capable of handling large currents, providing longer working time and higher power efficiency. In loads that require large currents and fast response, this MOSFET can provide reliable current control.
3. **Automotive electronics**: In the automotive field, IPB180N03S4L-H0-VB can be used in the powertrain, battery management system (BMS), starter and motor controller of electric vehicles (EV). Its high current carrying capacity and low on-resistance make it very suitable for high-power drive and load switching applications in automobiles.
4. **Motor Drive**: This MOSFET is suitable for the high current demands of motor drives, especially in applications that require precise control, such as industrial automation and robotics. Its low loss characteristics can improve the overall efficiency of the motor drive system.
5. **Server and Data Center Power**: In data centers and high-performance computing systems, this MOSFET can be used in server power management systems, especially in load management modules that require low on-resistance and high current capability, to ensure efficient operation and thermal management of the power system.
The excellent performance and flexible packaging design of the IPB180N03S4L-H0-VB enable it to excel in many high-power applications, especially in areas with strict requirements for efficiency and low losses.
1. **High-efficiency power management module**: IPB180N03S4L-H0-VB is widely used in high-efficiency power management modules, especially DC-DC converters (DC-DC) and uninterruptible power supply (UPS) systems that require low loss and high efficiency. Its low on-resistance helps reduce switching losses and significantly improves energy conversion efficiency.
2. **Power tools and battery-powered devices**: This MOSFET is very suitable for use in power tools and other battery-powered devices, capable of handling large currents, providing longer working time and higher power efficiency. In loads that require large currents and fast response, this MOSFET can provide reliable current control.
3. **Automotive electronics**: In the automotive field, IPB180N03S4L-H0-VB can be used in the powertrain, battery management system (BMS), starter and motor controller of electric vehicles (EV). Its high current carrying capacity and low on-resistance make it very suitable for high-power drive and load switching applications in automobiles.
4. **Motor Drive**: This MOSFET is suitable for the high current demands of motor drives, especially in applications that require precise control, such as industrial automation and robotics. Its low loss characteristics can improve the overall efficiency of the motor drive system.
5. **Server and Data Center Power**: In data centers and high-performance computing systems, this MOSFET can be used in server power management systems, especially in load management modules that require low on-resistance and high current capability, to ensure efficient operation and thermal management of the power system.
The excellent performance and flexible packaging design of the IPB180N03S4L-H0-VB enable it to excel in many high-power applications, especially in areas with strict requirements for efficiency and low losses.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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