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IPB180N03S4L-01-VB Product details
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1. Product Introduction
**IPB180N03S4L-01-VB** is a high-performance dual N-channel MOSFET in a TO263-7L package. Designed for applications requiring high current and low on-resistance, the device features a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, using advanced Trench technology. The on-resistance of this MOSFET is only 1mΩ at a gate-source voltage of 10V, and it is capable of supporting up to 200A of continuous drain current (ID). This ultra-low on-resistance and high current handling capability make it an ideal choice for high-efficiency and high-power applications.
**IPB180N03S4L-01-VB** is a high-performance dual N-channel MOSFET in a TO263-7L package. Designed for applications requiring high current and low on-resistance, the device features a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, using advanced Trench technology. The on-resistance of this MOSFET is only 1mΩ at a gate-source voltage of 10V, and it is capable of supporting up to 200A of continuous drain current (ID). This ultra-low on-resistance and high current handling capability make it an ideal choice for high-efficiency and high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
2. Detailed parameter description
- **Model**: IPB180N03S4L-01-VB
- **Package**: TO263-7L
- **Configuration**: Dual N-Channel MOSFET (Dual-N+N-Channel)
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 1mΩ @ VGS=10V
- **Continuous drain current (ID)**: 200A
- **Technology**: Trench technology
- **Power loss**: Optimized to reduce power consumption and thermal management
- **Switching characteristics**: Provide high frequency switching performance for efficient power supply design
- **Operating temperature range**: -55°C to 175°C
- **Model**: IPB180N03S4L-01-VB
- **Package**: TO263-7L
- **Configuration**: Dual N-Channel MOSFET (Dual-N+N-Channel)
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 1mΩ @ VGS=10V
- **Continuous drain current (ID)**: 200A
- **Technology**: Trench technology
- **Power loss**: Optimized to reduce power consumption and thermal management
- **Switching characteristics**: Provide high frequency switching performance for efficient power supply design
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
3. Applications and modules
**IPB180N03S4L-01-VB** MOSFET is suitable for multiple high-power and high-efficiency applications due to its extremely low on-resistance and high current carrying capacity:
- **Electric Vehicles and Battery Management Systems (BMS)**: This MOSFET is ideal for use in high-power modules in electric vehicles, such as battery management systems and drive inverters. Due to its low on-resistance and high current capability, it can reduce power losses and improve battery charging and discharging efficiency, thereby extending battery life and improving energy efficiency.
- **Server Power and Data Center Power**: In high-efficiency data center power supplies, IPB180N03S4L-01-VB can be used in DC-DC converters and voltage regulator circuits. Its low on-resistance reduces energy losses, ensuring that servers maintain efficient operation under high power demands.
- **Motor Drive Systems**: This MOSFET is suitable for high-power motor drives, especially in industrial automation and robotics. In these systems, it can effectively manage the power of the motor and provide more stable and efficient current control.
- **Solar Inverters**: The IPB180N03S4L-01-VB can also be used in inverters in solar power generation systems, supporting efficient DC to AC conversion. Its high current handling capability can improve the conversion efficiency of the overall system and reduce losses.
- **Uninterruptible Power Supply (UPS)**: This MOSFET can effectively control the flow of power in UPS systems, especially in high-power UPS equipment, providing reliable power switching and protection.
- **Power Tools and Industrial Power Equipment**: In high-power power tools and industrial equipment, this MOSFET can ensure efficient energy transfer and current management, support stable operation of the equipment and reduce overheating problems.
In general, **IPB180N03S4L-01-VB** is a MOSFET suitable for a variety of high-power applications. Its high current carrying capability and low on-resistance enable it to perform well in high-efficiency power management, electric vehicle systems, motor control and other fields.
**IPB180N03S4L-01-VB** MOSFET is suitable for multiple high-power and high-efficiency applications due to its extremely low on-resistance and high current carrying capacity:
- **Electric Vehicles and Battery Management Systems (BMS)**: This MOSFET is ideal for use in high-power modules in electric vehicles, such as battery management systems and drive inverters. Due to its low on-resistance and high current capability, it can reduce power losses and improve battery charging and discharging efficiency, thereby extending battery life and improving energy efficiency.
- **Server Power and Data Center Power**: In high-efficiency data center power supplies, IPB180N03S4L-01-VB can be used in DC-DC converters and voltage regulator circuits. Its low on-resistance reduces energy losses, ensuring that servers maintain efficient operation under high power demands.
- **Motor Drive Systems**: This MOSFET is suitable for high-power motor drives, especially in industrial automation and robotics. In these systems, it can effectively manage the power of the motor and provide more stable and efficient current control.
- **Solar Inverters**: The IPB180N03S4L-01-VB can also be used in inverters in solar power generation systems, supporting efficient DC to AC conversion. Its high current handling capability can improve the conversion efficiency of the overall system and reduce losses.
- **Uninterruptible Power Supply (UPS)**: This MOSFET can effectively control the flow of power in UPS systems, especially in high-power UPS equipment, providing reliable power switching and protection.
- **Power Tools and Industrial Power Equipment**: In high-power power tools and industrial equipment, this MOSFET can ensure efficient energy transfer and current management, support stable operation of the equipment and reduce overheating problems.
In general, **IPB180N03S4L-01-VB** is a MOSFET suitable for a variety of high-power applications. Its high current carrying capability and low on-resistance enable it to perform well in high-efficiency power management, electric vehicle systems, motor control and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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