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IPB16CNE8N G-VB Product details
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1. Product Introduction of IPB16CNE8N G-VB MOSFET
IPB16CNE8N G-VB is a single N-channel power MOSFET using advanced trench technology (Trench), package type TO-263, suitable for high voltage and high current applications. Its drain-source voltage (VDS) is as high as 80V, the drain current (ID) can reach a maximum of 120A, and the on-resistance is very low, 10mΩ when the gate voltage (VGS) is 4.5V, and 6mΩ when VGS is 10V. The gate threshold voltage (Vth) of this MOSFET is 3V, and the design takes into account both high efficiency and reliability, which is very suitable for applications requiring high-efficiency power conversion and control.
IPB16CNE8N G-VB is a single N-channel power MOSFET using advanced trench technology (Trench), package type TO-263, suitable for high voltage and high current applications. Its drain-source voltage (VDS) is as high as 80V, the drain current (ID) can reach a maximum of 120A, and the on-resistance is very low, 10mΩ when the gate voltage (VGS) is 4.5V, and 6mΩ when VGS is 10V. The gate threshold voltage (Vth) of this MOSFET is 3V, and the design takes into account both high efficiency and reliability, which is very suitable for applications requiring high-efficiency power conversion and control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description of IPB16CNE8N G-VB MOSFET
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 120A
- **Technology type**: Trench technology
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 120A
- **Technology type**: Trench technology
Domain and module applications：
III. Application fields and module examples of IPB16CNE8N G-VB
1. **Electric vehicle power management**: IPB16CNE8N G-VB is very suitable for power management modules of electric vehicles due to its high current carrying capacity and low on-resistance. It can effectively handle the power requirements of electric vehicle batteries and is used in power conversion devices such as DC-DC converters and on-board chargers to improve the energy efficiency of electric vehicles.
2. **Solar inverter**: In solar power generation systems, especially inverter modules, IPB16CNE8N G-VB can help achieve efficient DC to AC power conversion. Its high current handling capability and low power loss characteristics can provide stable and efficient power management for solar inverters to maximize power generation efficiency.
3. **Industrial motor drive**: IPB16CNE8N G-VB is widely used in motor drive modules in industrial environments. These modules require high-current and high-reliability MOSFETs to handle high power demands, especially in variable-frequency drives and servo drives, where the MOSFETs provide fast response and efficient power management.
4. **High-power communication equipment**: In the power modules of communication equipment, the IPB16CNE8N G-VB MOSFET can be used in high-frequency switching power supplies and power conversion modules, especially in base stations and communication signal equipment. This component can provide stable, low-loss power management solutions to ensure reliable operation of the equipment under high loads.
In short, the IPB16CNE8N G-VB MOSFET is widely used in electric vehicle power management, solar inverters, industrial motor drives, and high-power communication equipment due to its high current handling capability, low on-resistance, and high reliability, helping to achieve efficient and reliable power management and energy conversion.
1. **Electric vehicle power management**: IPB16CNE8N G-VB is very suitable for power management modules of electric vehicles due to its high current carrying capacity and low on-resistance. It can effectively handle the power requirements of electric vehicle batteries and is used in power conversion devices such as DC-DC converters and on-board chargers to improve the energy efficiency of electric vehicles.
2. **Solar inverter**: In solar power generation systems, especially inverter modules, IPB16CNE8N G-VB can help achieve efficient DC to AC power conversion. Its high current handling capability and low power loss characteristics can provide stable and efficient power management for solar inverters to maximize power generation efficiency.
3. **Industrial motor drive**: IPB16CNE8N G-VB is widely used in motor drive modules in industrial environments. These modules require high-current and high-reliability MOSFETs to handle high power demands, especially in variable-frequency drives and servo drives, where the MOSFETs provide fast response and efficient power management.
4. **High-power communication equipment**: In the power modules of communication equipment, the IPB16CNE8N G-VB MOSFET can be used in high-frequency switching power supplies and power conversion modules, especially in base stations and communication signal equipment. This component can provide stable, low-loss power management solutions to ensure reliable operation of the equipment under high loads.
In short, the IPB16CNE8N G-VB MOSFET is widely used in electric vehicle power management, solar inverters, industrial motor drives, and high-power communication equipment due to its high current handling capability, low on-resistance, and high reliability, helping to achieve efficient and reliable power management and energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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