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IPB16CN10N G-VB Product details

Product introduction:

IPB16CN10N G-VB Product Introduction

IPB16CN10N G-VB is a high-efficiency N-type power MOSFET in TO263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 100V and gate-source voltage (VGS) is ±20V, which is suitable for industrial and automotive electronics applications that require strong current handling capabilities. This MOSFET has a threshold voltage of 2.5V and achieves low on-resistance based on Trench technology. The on-resistance is 23mΩ at VGS=4.5V and 10mΩ at VGS=10V. It supports drain currents up to 100A and is suitable for efficient power management and motor drive systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 100V 2.5V 100A 10mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 100V 2.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 100V 2.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
IPB16CN10N G-VB parameter description

- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ@VGS=4.5V
- 10mΩ@VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench technology

Domain and module applications:

Application fields and modules of IPB16CN10N G-VB

1. **Automotive electronics and power systems**: IPB16CN10N G-VB is suitable for power management, inverters and motor drive modules of electric vehicles and hybrid vehicles. Its high voltage resistance and high current capability enable it to cope with complex vehicle powertrain requirements such as DC-DC converters, on-board chargers and motor control modules.

2. **Industrial motor control**: In industrial automation and motor control systems, this MOSFET can be used in modules such as motor starting, driving and speed control. Its high current handling capability and low on-resistance ensure the stability and reliability of the equipment at high power, especially for demanding industrial environments.

3. **Solar inverters and energy management**: In solar power generation and energy storage systems, IPB16CN10N G-VB can be used in power converters and inverters. Its high voltage and efficient switching performance help improve energy conversion efficiency and minimize energy loss, making it suitable for use in inverters for solar panels and other renewable energy devices.

4. **Data Center Power Supplies and Server Power Modules**: The high current capability and low on-resistance of the IPB16CN10N G-VB make it an ideal choice for data center and high-performance server power modules. Such power management applications require high efficiency, low losses, and require MOSFETs to maintain stable operation under high power conditions.

5. **Power Tools and Home Appliances**: This MOSFET can also be used in a variety of power tools and high-power home appliances, such as brushless motor drives, inverters, and speed regulators. Its low on-resistance and efficient switching performance provide these devices with better energy efficiency and longer service life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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