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IPB160N04S4-H1-VB Product details
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1. IPB160N04S4-H1-VB Product Introduction:
IPB160N04S4-H1-VB is a dual N-channel MOSFET provided by Infineon, package type TO263-7L. This MOSFET adopts Trench technology and is designed for high-efficiency, high-current applications. It has a low on-resistance (RDS(ON)), which is only 1mΩ at VGS=10V. The maximum drain-source voltage (VDS) is 40V, the gate-source voltage (VGS) tolerance is ±20V, the threshold voltage (Vth) is 3V, and the maximum drain current (ID) is 200A. It is designed for use in areas that require high power handling and fast switching, and is suitable for a variety of application scenarios including automotive, industrial and power management.
IPB160N04S4-H1-VB is a dual N-channel MOSFET provided by Infineon, package type TO263-7L. This MOSFET adopts Trench technology and is designed for high-efficiency, high-current applications. It has a low on-resistance (RDS(ON)), which is only 1mΩ at VGS=10V. The maximum drain-source voltage (VDS) is 40V, the gate-source voltage (VGS) tolerance is ±20V, the threshold voltage (Vth) is 3V, and the maximum drain current (ID) is 200A. It is designed for use in areas that require high power handling and fast switching, and is suitable for a variety of application scenarios including automotive, industrial and power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
2. Detailed parameter description of IPB160N04S4-H1-VB:
- **Package type**: TO263-7L
- **Configuration**: Dual N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 1mΩ @ VGS=10V
- **Maximum drain current (ID)**: 200A
- **Technology type**: Trench
- **Package type**: TO263-7L
- **Configuration**: Dual N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 1mΩ @ VGS=10V
- **Maximum drain current (ID)**: 200A
- **Technology type**: Trench
Domain and module applications：
III. Application fields and modules:
1. **Automotive electronics and electric vehicle (EV) battery management**:
IPB160N04S4-H1-VB is suitable for battery management systems and power conversion modules in electric vehicles due to its high current carrying capacity and low on-resistance. These characteristics enable it to effectively reduce power losses and improve efficiency when handling the high power requirements of electric vehicles. The low on-resistance of MOSFET is particularly important in vehicle power distribution and battery protection.
2. **Server and data center power management**:
In efficient power management in servers and data centers, the high current handling capability and low loss characteristics of this MOSFET are suitable for DC-DC converters and uninterruptible power supply (UPS) systems. IPB160N04S4-H1-VB can improve system energy efficiency and ensure stable operation of data centers while reducing energy consumption.
3. **Industrial motor drive and control**:
This MOSFET also performs well in industrial motor drives, especially in applications involving high currents. For example, in scenarios such as factory automation, elevator control, and mechanical drive, its low on-resistance can reduce power loss when the motor starts, ensuring long-term stable operation.
4. **Solar inverter and energy storage system**:
In the field of solar inverters and energy storage, the high-efficiency power conversion characteristics of the IPB160N04S4-H1-VB ensure the stability and efficiency of solar power generation and energy storage. It can cope with instantaneous high-current load demands while maintaining efficient power conversion, making it an important device in new energy systems.
In summary, the IPB160N04S4-H1-VB is suitable for high-efficiency, high-power application environments, and its low loss and high current characteristics make it an ideal choice in many fields such as automobiles, data centers, industrial control, and new energy management.
1. **Automotive electronics and electric vehicle (EV) battery management**:
IPB160N04S4-H1-VB is suitable for battery management systems and power conversion modules in electric vehicles due to its high current carrying capacity and low on-resistance. These characteristics enable it to effectively reduce power losses and improve efficiency when handling the high power requirements of electric vehicles. The low on-resistance of MOSFET is particularly important in vehicle power distribution and battery protection.
2. **Server and data center power management**:
In efficient power management in servers and data centers, the high current handling capability and low loss characteristics of this MOSFET are suitable for DC-DC converters and uninterruptible power supply (UPS) systems. IPB160N04S4-H1-VB can improve system energy efficiency and ensure stable operation of data centers while reducing energy consumption.
3. **Industrial motor drive and control**:
This MOSFET also performs well in industrial motor drives, especially in applications involving high currents. For example, in scenarios such as factory automation, elevator control, and mechanical drive, its low on-resistance can reduce power loss when the motor starts, ensuring long-term stable operation.
4. **Solar inverter and energy storage system**:
In the field of solar inverters and energy storage, the high-efficiency power conversion characteristics of the IPB160N04S4-H1-VB ensure the stability and efficiency of solar power generation and energy storage. It can cope with instantaneous high-current load demands while maintaining efficient power conversion, making it an important device in new energy systems.
In summary, the IPB160N04S4-H1-VB is suitable for high-efficiency, high-power application environments, and its low loss and high current characteristics make it an ideal choice in many fields such as automobiles, data centers, industrial control, and new energy management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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