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IPB160N04S4-02D-VB Product details
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Product Introduction
**IPB160N04S4-02D-VB** is a high-performance dual N-Channel MOSFET in TO263-7L package and manufactured based on advanced Trench technology. This MOSFET integrates two N-Channel MOSFETs, providing up to 200A current handling capability and 40V maximum drain-source voltage in the same package. Its extremely low on-resistance gives it excellent power efficiency and thermal management performance in high current applications, making it suitable for power switches, electric vehicles, and high-power power management systems.
**IPB160N04S4-02D-VB** is a high-performance dual N-Channel MOSFET in TO263-7L package and manufactured based on advanced Trench technology. This MOSFET integrates two N-Channel MOSFETs, providing up to 200A current handling capability and 40V maximum drain-source voltage in the same package. Its extremely low on-resistance gives it excellent power efficiency and thermal management performance in high current applications, making it suitable for power switches, electric vehicles, and high-power power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
Detailed parameter description
- **Package**: TO263-7L
- **Configuration**: Dual-N+N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 1mΩ (at VGS = 10V)
- **Maximum continuous current (ID)**: 200A
- **Technology**: Trench
- **Package**: TO263-7L
- **Configuration**: Dual-N+N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 1mΩ (at VGS = 10V)
- **Maximum continuous current (ID)**: 200A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management system**:
**IPB160N04S4-02D-VB**'s dual N-Channel MOSFET design makes it very suitable for power management systems, especially high-power DC-DC converters and power switch modules. Its low on-resistance and high current capability can effectively reduce power consumption and improve the overall efficiency of the system, ensuring stable operation under high current loads.
2. **Electric Vehicle**:
In electric vehicle applications, this MOSFET can be used in motor drives and battery management systems. Its high current carrying capacity and low RDS(ON) ensure excellent performance in power transmission and power control in electric vehicles, thereby improving the performance and endurance of the vehicle.
3. **Industrial Control and Automation**:
In industrial control and automation systems, **IPB160N04S4-02D-VB** is suitable for driving high-power motors and controlling industrial equipment. Its high current handling capability enables it to remain stable in high-load applications, while its low on-resistance helps improve the system's power efficiency and thermal management, making it suitable for industrial environments that require high reliability.
4. **High Power Switching Applications**:
**IPB160N04S4-02D-VB** is also suitable for high-power switching applications such as power switches and load switching systems. Its extremely low RDS(ON) can effectively manage high current loads and reduce switching losses, making it suitable for applications that require efficient switching operations, such as high-power power supplies and power amplifiers.
1. **Power management system**:
**IPB160N04S4-02D-VB**'s dual N-Channel MOSFET design makes it very suitable for power management systems, especially high-power DC-DC converters and power switch modules. Its low on-resistance and high current capability can effectively reduce power consumption and improve the overall efficiency of the system, ensuring stable operation under high current loads.
2. **Electric Vehicle**:
In electric vehicle applications, this MOSFET can be used in motor drives and battery management systems. Its high current carrying capacity and low RDS(ON) ensure excellent performance in power transmission and power control in electric vehicles, thereby improving the performance and endurance of the vehicle.
3. **Industrial Control and Automation**:
In industrial control and automation systems, **IPB160N04S4-02D-VB** is suitable for driving high-power motors and controlling industrial equipment. Its high current handling capability enables it to remain stable in high-load applications, while its low on-resistance helps improve the system's power efficiency and thermal management, making it suitable for industrial environments that require high reliability.
4. **High Power Switching Applications**:
**IPB160N04S4-02D-VB** is also suitable for high-power switching applications such as power switches and load switching systems. Its extremely low RDS(ON) can effectively manage high current loads and reduce switching losses, making it suitable for applications that require efficient switching operations, such as high-power power supplies and power amplifiers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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