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IPB160N04S3-H2-VB Product details
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IPB160N04S3-H2-VB is a high-performance dual N-channel MOSFET in TO263-7L package, designed for high current and low on-resistance applications. With a drain-source voltage (VDS) of 40V, a drain current (ID) of up to 200A, and an on-resistance (RDS(ON)) of 1mΩ at VGS=10V, this MOSFET provides excellent current handling capability and low power consumption. Using Trench technology, this MOSFET has good switching performance and heat dissipation characteristics, and is suitable for a variety of high current and high efficiency power management and power conversion systems.
**IPB160N04S3-H2-VB
IPB160N04S3-H2-VB is a high-performance dual N-channel MOSFET in TO263-7L package, designed for high current and low on-resistance applications. With a drain-source voltage (VDS) of 40V, a drain current (ID) of up to 200A, and an on-resistance (RDS(ON)) of 1mΩ at VGS=10V, this MOSFET provides excellent current handling capability and low power consumption. Using Trench technology, this MOSFET has good switching performance and heat dissipation characteristics, and is suitable for a variety of high current and high efficiency power management and power conversion systems.
**IPB160N04S3-H2-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
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- **Package**: TO263-7L
- **Configuration**: Dual N-channel
- **Drain-source voltage(VDS)**: 40V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 3V
- **On-resistance(RDS(ON))**: 1mΩ @ VGS=10V
- **Drain current(ID)**: 200A
- **Technology**: Trench
**
- **Package**: TO263-7L
- **Configuration**: Dual N-channel
- **Drain-source voltage(VDS)**: 40V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 3V
- **On-resistance(RDS(ON))**: 1mΩ @ VGS=10V
- **Drain current(ID)**: 200A
- **Technology**: Trench
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Domain and module applications：
1. **High-efficiency power management**
The IPB160N04S3-H2-VB is suitable for high-efficiency power management systems such as DC-DC converters and switching power supplies (SMPS). Its high current handling capability and low on-resistance can significantly improve power conversion efficiency and reduce energy loss, and is widely used in power modules for data center power supplies, server power supplies, and network equipment.
2. **Electric vehicle (EV) charging system**
In the charging system of electric vehicles, the IPB160N04S3-H2-VB can be used as a switch for high-power chargers or as a key component in battery management systems. Its high current and low on-resistance characteristics improve charging efficiency and system stability, helping to shorten charging time and extend battery life.
3. **Industrial motor drive**
This MOSFET is also very suitable for industrial motor drive systems, especially in application scenarios that require high current and high switching frequency. The high current capability and low on-resistance of IPB160N04S3-H2-VB enable it to effectively control and drive high-power motors, and is suitable for motor control modules in industrial automation equipment to ensure efficient operation of the system.
4. **Power Inverter**
In power inverter applications, IPB160N04S3-H2-VB is able to handle high current switching requirements and is widely used in solar inverters and wind inverters. Its low on-resistance and high current carrying capacity ensure the high efficiency and reliability of the inverter, which helps to improve the overall performance and stability of renewable energy systems. **IPB160N04S3-H2-VB
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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