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IPB160N04S2L-03-VB Product details
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IPB160N04S2L-03-VB Product Introduction
IPB160N04S2L-03-VB is a high-performance dual N-channel MOSFET in TO263-7L package, designed for high current and high efficiency applications. Utilizing Trench technology, this MOSFET provides extremely low on-resistance (RDS(ON)) and excellent switching characteristics, suitable for applications requiring high current handling capabilities. Its maximum drain current of up to 200A and drain-source voltage tolerance of 40V enable it to perform well in high-power applications, suitable for a variety of scenarios requiring efficient switching and power control.
IPB160N04S2L-03-VB is a high-performance dual N-channel MOSFET in TO263-7L package, designed for high current and high efficiency applications. Utilizing Trench technology, this MOSFET provides extremely low on-resistance (RDS(ON)) and excellent switching characteristics, suitable for applications requiring high current handling capabilities. Its maximum drain current of up to 200A and drain-source voltage tolerance of 40V enable it to perform well in high-power applications, suitable for a variety of scenarios requiring efficient switching and power control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
IPB160N04S2L-03-VB Detailed parameter description
- **Package type**: TO263-7L
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1mΩ @ VGS=10V
- **Maximum drain current (ID)**: 200A
- **Technology**: Trench technology
- **Package type**: TO263-7L
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1mΩ @ VGS=10V
- **Maximum drain current (ID)**: 200A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management system**: The IPB160N04S2L-03-VB is ideal for efficient power management systems such as high-power DC-DC converters and point-of-load (POL) modules. Its low on-resistance and high current handling capability enable it to optimize power conversion efficiency, reduce energy losses, and improve overall system performance and stability.
2. **Industrial power control**: In industrial control and motor drive applications, the IPB160N04S2L-03-VB can be used for high-power motor drives and inverters. Its high current capability and low on-resistance ensure efficient operation of power control systems and improve equipment reliability and durability.
3. **Automotive electronics**: This MOSFET is suitable for battery management systems (BMS) and motor control modules in electric and hybrid vehicles. Its high current capability and low power consumption ensure the stability of automotive power systems and improve system efficiency and life.
4. **Consumer Electronics**: IPB160N04S2L-03-VB can be used in power management modules of high-end consumer electronic devices, such as high-power power adapters and power protection circuits. Its high performance and low power consumption characteristics help optimize power performance and extend the battery life of the device.
With its high current handling capability and low power consumption characteristics, IPB160N04S2L-03-VB can perform well in a variety of high-power applications that require high performance and stability.
1. **Power management system**: The IPB160N04S2L-03-VB is ideal for efficient power management systems such as high-power DC-DC converters and point-of-load (POL) modules. Its low on-resistance and high current handling capability enable it to optimize power conversion efficiency, reduce energy losses, and improve overall system performance and stability.
2. **Industrial power control**: In industrial control and motor drive applications, the IPB160N04S2L-03-VB can be used for high-power motor drives and inverters. Its high current capability and low on-resistance ensure efficient operation of power control systems and improve equipment reliability and durability.
3. **Automotive electronics**: This MOSFET is suitable for battery management systems (BMS) and motor control modules in electric and hybrid vehicles. Its high current capability and low power consumption ensure the stability of automotive power systems and improve system efficiency and life.
4. **Consumer Electronics**: IPB160N04S2L-03-VB can be used in power management modules of high-end consumer electronic devices, such as high-power power adapters and power protection circuits. Its high performance and low power consumption characteristics help optimize power performance and extend the battery life of the device.
With its high current handling capability and low power consumption characteristics, IPB160N04S2L-03-VB can perform well in a variety of high-power applications that require high performance and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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