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IPB160N04S2-03-VB Product details
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Product Introduction
IPB160N04S2-03-VB is a high-performance dual N-channel MOSFET in TO263-7L package, designed for high current and medium voltage applications. Its maximum drain-source voltage (VDS) is 40V and its maximum on-current (ID) is 200A. The on-resistance of this MOSFET is 1mΩ at a gate drive voltage of 10V, and it has extremely low conduction losses. Using advanced trench technology, the device not only provides excellent switching performance, but also maintains high efficiency under high current conditions, making it very suitable for applications that require high current handling.
IPB160N04S2-03-VB is a high-performance dual N-channel MOSFET in TO263-7L package, designed for high current and medium voltage applications. Its maximum drain-source voltage (VDS) is 40V and its maximum on-current (ID) is 200A. The on-resistance of this MOSFET is 1mΩ at a gate drive voltage of 10V, and it has extremely low conduction losses. Using advanced trench technology, the device not only provides excellent switching performance, but also maintains high efficiency under high current conditions, making it very suitable for applications that require high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
Detailed parameter description
- **Package type**: TO263-7L
- **Channel configuration**: Dual N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS = 10V: 1mΩ
- **Maximum on-current (ID)**: 200A
- **Technology type**: Trench
- **Package type**: TO263-7L
- **Channel configuration**: Dual N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS = 10V: 1mΩ
- **Maximum on-current (ID)**: 200A
- **Technology type**: Trench
Domain and module applications：
Application areas and module examples: The high current handling capability and extremely low on-resistance of the IPB160N04S2-03-VB MOSFET make it very suitable for a variety of high-efficiency applications. First, in DC-DC converters, this MOSFET can efficiently handle large currents, reduce energy losses, and improve the overall efficiency of the system. Secondly, in switching power supplies (SMPS), its low on-resistance can effectively reduce power losses and provide a stable current supply, which is suitable for high-power and high-current scenarios. In addition, due to its excellent switching performance, this MOSFET is also widely used in battery management systems (BMS) and motor drive systems in electric vehicles. It can operate stably under high current and medium voltage conditions to ensure the safety and reliability of the system. In various high-efficiency power modules and power management systems, IPB160N04S2-03-VB MOSFET is an ideal choice.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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