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IPB147N03L G-VB Product details
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1. Product Introduction
IPB147N03L G-VB is a high-performance single N-channel MOSFET in TO263 package. The MOSFET has a maximum drain-source voltage (VDS) of 30V and a gate voltage (VGS) of ±20V. Its turn-on voltage (Vth) is 1.7V, and its on-resistance (RDS(ON)) is 18mΩ@VGS=4.5V and 12mΩ@VGS=10V. The drain current (ID) can reach 50A, using advanced Trench technology. With low on-resistance and high current handling capability, the MOSFET is suitable for various application scenarios that require high efficiency and low power consumption.
IPB147N03L G-VB is a high-performance single N-channel MOSFET in TO263 package. The MOSFET has a maximum drain-source voltage (VDS) of 30V and a gate voltage (VGS) of ±20V. Its turn-on voltage (Vth) is 1.7V, and its on-resistance (RDS(ON)) is 18mΩ@VGS=4.5V and 12mΩ@VGS=10V. The drain current (ID) can reach 50A, using advanced Trench technology. With low on-resistance and high current handling capability, the MOSFET is suitable for various application scenarios that require high efficiency and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Drain current (ID)**: 50A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Drain current (ID)**: 50A
- **Technology**: Trench technology
Domain and module applications：
3. Application fields and module examples
1. **Power management**: IPB147N03L G-VB is suitable for power management modules such as DC-DC converters and power switches. Its low on-resistance and high current handling capability help improve the efficiency of the power supply, reduce power consumption, and provide stable performance in various power applications.
2. **Automotive electronics**: In automotive electronic systems, this MOSFET can be used for load switching, LED driving, and motor control. Due to its high current handling capability and low power consumption characteristics, it is suitable for providing reliable switching functions and efficient energy management in the power system of the car.
3. **Switch mode power supply (SMPS)**: In switch mode power supply modules, IPB147N03L G-VB is able to handle higher currents and maintain low on-resistance. This makes it suitable for efficient power conversion applications such as adapters and chargers, helping to reduce power losses and improve system efficiency.
4. **Load Switch**: This MOSFET is suitable for various load switch applications, such as power switches in home appliances and industrial equipment. Its low RDS(ON) enables effective reduction of power consumption during the switching process, improving the working efficiency and life of the equipment.
5. **Motor Drive**: The IPB147N03L G-VB performs well in motor drive applications and can handle higher currents. It is suitable for control systems of power tools and small motors, providing stable and efficient motor drive solutions.
The low on-resistance and high current handling capability of the IPB147N03L G-VB enable it to perform well in a variety of high-performance applications, meeting the power management and switching needs of different fields.
1. **Power management**: IPB147N03L G-VB is suitable for power management modules such as DC-DC converters and power switches. Its low on-resistance and high current handling capability help improve the efficiency of the power supply, reduce power consumption, and provide stable performance in various power applications.
2. **Automotive electronics**: In automotive electronic systems, this MOSFET can be used for load switching, LED driving, and motor control. Due to its high current handling capability and low power consumption characteristics, it is suitable for providing reliable switching functions and efficient energy management in the power system of the car.
3. **Switch mode power supply (SMPS)**: In switch mode power supply modules, IPB147N03L G-VB is able to handle higher currents and maintain low on-resistance. This makes it suitable for efficient power conversion applications such as adapters and chargers, helping to reduce power losses and improve system efficiency.
4. **Load Switch**: This MOSFET is suitable for various load switch applications, such as power switches in home appliances and industrial equipment. Its low RDS(ON) enables effective reduction of power consumption during the switching process, improving the working efficiency and life of the equipment.
5. **Motor Drive**: The IPB147N03L G-VB performs well in motor drive applications and can handle higher currents. It is suitable for control systems of power tools and small motors, providing stable and efficient motor drive solutions.
The low on-resistance and high current handling capability of the IPB147N03L G-VB enable it to perform well in a variety of high-performance applications, meeting the power management and switching needs of different fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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