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IPB144N12N3 G-VB Product details
Back to previous pageProduct introduction：
Product Introduction:
IPB144N12N3 G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high current applications. This MOSFET has a high drain-source voltage (VDS) of 100V and can withstand a drain current of up to 100A. Its on-resistance (RDS(ON)) is 10mΩ at VGS of 10V, with excellent conductivity and low power consumption. IPB144N12N3 G-VB uses Trench technology, providing efficient switching performance and low conduction losses, and is very suitable for electronic modules requiring high voltage and high current handling capabilities.
IPB144N12N3 G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high current applications. This MOSFET has a high drain-source voltage (VDS) of 100V and can withstand a drain current of up to 100A. Its on-resistance (RDS(ON)) is 10mΩ at VGS of 10V, with excellent conductivity and low power consumption. IPB144N12N3 G-VB uses Trench technology, providing efficient switching performance and low conduction losses, and is very suitable for electronic modules requiring high voltage and high current handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ@VGS=4.5V
- 10mΩ@VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench technology, providing low on-resistance and high switching speed
- **Thermal resistance (Rth(ja))**: About 62 K/W (typical value)
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ@VGS=4.5V
- 10mΩ@VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench technology, providing low on-resistance and high switching speed
- **Thermal resistance (Rth(ja))**: About 62 K/W (typical value)
Domain and module applications：
Applicable fields and module applications:
1. **High voltage switching power supply (SMPS)**: IPB144N12N3 G-VB is suitable for high voltage switching mode power supply (SMPS). Its high voltage tolerance and low on-resistance enable it to effectively handle high power loads, improve the efficiency and stability of the power supply, especially in applications that require high current and high voltage conversion.
2. **Electric vehicle (EV) battery management system (BMS)**: This MOSFET can handle high voltage and high current in the battery management system of electric vehicles, and is suitable for control and protection during battery charging and discharging, ensuring the efficiency and safety of the battery system.
3. **Industrial motor drive**: IPB144N12N3 G-VB is an ideal choice for industrial motor drive systems, capable of handling high voltage and high current loads. Its high current carrying capacity and low power consumption make it suitable for industrial applications such as inverters and servo drives, ensuring the efficient operation of motor drive systems.
4. **High-power power modules**: In high-power power modules, such as power systems in data centers and server power management, this MOSFET can provide reliable current control and low loss, ensuring the stability and high efficiency of the power supply.
5. **Power protection circuit**: The low on-resistance and high current capability of the IPB144N12N3 G-VB make it suitable for power protection circuits, which can effectively control current and prevent overcurrent conditions, thereby protecting electronic systems from damage.
1. **High voltage switching power supply (SMPS)**: IPB144N12N3 G-VB is suitable for high voltage switching mode power supply (SMPS). Its high voltage tolerance and low on-resistance enable it to effectively handle high power loads, improve the efficiency and stability of the power supply, especially in applications that require high current and high voltage conversion.
2. **Electric vehicle (EV) battery management system (BMS)**: This MOSFET can handle high voltage and high current in the battery management system of electric vehicles, and is suitable for control and protection during battery charging and discharging, ensuring the efficiency and safety of the battery system.
3. **Industrial motor drive**: IPB144N12N3 G-VB is an ideal choice for industrial motor drive systems, capable of handling high voltage and high current loads. Its high current carrying capacity and low power consumption make it suitable for industrial applications such as inverters and servo drives, ensuring the efficient operation of motor drive systems.
4. **High-power power modules**: In high-power power modules, such as power systems in data centers and server power management, this MOSFET can provide reliable current control and low loss, ensuring the stability and high efficiency of the power supply.
5. **Power protection circuit**: The low on-resistance and high current capability of the IPB144N12N3 G-VB make it suitable for power protection circuits, which can effectively control current and prevent overcurrent conditions, thereby protecting electronic systems from damage.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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