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IPB13N03LB G-VB Product details
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1. Product Introduction
**IPB13N03LB G-VB** is a high-performance single N-channel MOSFET in TO263 package. This MOSFET is designed for medium voltage and current applications, with a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. It uses Trench trench technology, with an on-resistance of 18mΩ at a gate-source voltage of 4.5V and 12mΩ at 10V, and can support a continuous drain current (ID) of up to 50A. This MOSFET is particularly suitable for applications that require medium power and high efficiency.
**IPB13N03LB G-VB** is a high-performance single N-channel MOSFET in TO263 package. This MOSFET is designed for medium voltage and current applications, with a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. It uses Trench trench technology, with an on-resistance of 18mΩ at a gate-source voltage of 4.5V and 12mΩ at 10V, and can support a continuous drain current (ID) of up to 50A. This MOSFET is particularly suitable for applications that require medium power and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Model**: IPB13N03LB G-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-up voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Continuous drain current (ID)**: 50A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Switching time**: Optimized for medium and high frequency operation
- **Gate charge (Qg)**: Provides better switching performance, suitable for medium and high frequency applications
- **Model**: IPB13N03LB G-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-up voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Continuous drain current (ID)**: 50A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Switching time**: Optimized for medium and high frequency operation
- **Gate charge (Qg)**: Provides better switching performance, suitable for medium and high frequency applications
Domain and module applications：
3. Applicable fields and modules
**IPB13N03LB G-VB** MOSFET's medium current handling capability and relatively low on-resistance make it perform well in multiple fields and modules. Here are some typical application scenarios:
- **Power management**: This MOSFET is suitable for DC-DC converters and power regulators, especially in situations where medium current and medium power handling are required. Due to its low on-resistance, it can effectively improve conversion efficiency and reduce power consumption, and is suitable for small and medium power industrial power supplies and consumer electronic power modules.
- **Electric Vehicles (EV)**: In battery management systems (BMS) and electric drive systems, IPB13N03LB G-VB can provide reliable current control and optimize the performance of batteries and motors. Its medium current handling capability is suitable for medium power electric vehicle applications.
- **Motor drive**: It is suitable for medium power motor drive modules, especially in situations such as industrial automation and robotics that require stable current control. This MOSFET can effectively manage the power output of the motor and improve the overall performance of the system.
- **Uninterruptible Power Supply (UPS)**: In medium-power UPS systems and inverters, this MOSFET can provide stable power control to ensure efficient operation of the system. Its medium current handling capability and on-resistance are suitable for medium-power UPS applications.
- **Consumer Electronics Devices**: In chargers and power modules that require medium power and high efficiency, this MOSFET can reduce power loss and improve energy transfer efficiency, and is suitable for power management modules of various consumer electronic devices.
In short, the **IPB13N03LB G-VB** MOSFET is suitable for medium-power applications in multiple fields with its medium current handling capability and good switching performance, which helps to improve the efficiency and stability of the system.
**IPB13N03LB G-VB** MOSFET's medium current handling capability and relatively low on-resistance make it perform well in multiple fields and modules. Here are some typical application scenarios:
- **Power management**: This MOSFET is suitable for DC-DC converters and power regulators, especially in situations where medium current and medium power handling are required. Due to its low on-resistance, it can effectively improve conversion efficiency and reduce power consumption, and is suitable for small and medium power industrial power supplies and consumer electronic power modules.
- **Electric Vehicles (EV)**: In battery management systems (BMS) and electric drive systems, IPB13N03LB G-VB can provide reliable current control and optimize the performance of batteries and motors. Its medium current handling capability is suitable for medium power electric vehicle applications.
- **Motor drive**: It is suitable for medium power motor drive modules, especially in situations such as industrial automation and robotics that require stable current control. This MOSFET can effectively manage the power output of the motor and improve the overall performance of the system.
- **Uninterruptible Power Supply (UPS)**: In medium-power UPS systems and inverters, this MOSFET can provide stable power control to ensure efficient operation of the system. Its medium current handling capability and on-resistance are suitable for medium-power UPS applications.
- **Consumer Electronics Devices**: In chargers and power modules that require medium power and high efficiency, this MOSFET can reduce power loss and improve energy transfer efficiency, and is suitable for power management modules of various consumer electronic devices.
In short, the **IPB13N03LB G-VB** MOSFET is suitable for medium-power applications in multiple fields with its medium current handling capability and good switching performance, which helps to improve the efficiency and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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