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IPB136N08N3 G-VB Product details
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1. Product Introduction of IPB136N08N3 G-VB MOSFET
IPB136N08N3 G-VB is a high-performance N-channel power MOSFET in TO-263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 80V, and it can carry a continuous drain current of up to 120A, which is very suitable for use in high power and high current environments. This MOSFET is manufactured using advanced trench technology (Trench) and has very low on-resistance. It can provide excellent switching performance even at low gate voltage, ensuring high efficiency and low power consumption of the system.
IPB136N08N3 G-VB is a high-performance N-channel power MOSFET in TO-263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 80V, and it can carry a continuous drain current of up to 120A, which is very suitable for use in high power and high current environments. This MOSFET is manufactured using advanced trench technology (Trench) and has very low on-resistance. It can provide excellent switching performance even at low gate voltage, ensuring high efficiency and low power consumption of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description of IPB136N08N3 G-VB MOSFET
- **Package type**: TO-263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 120A
- **Technology**: Trench technology
- **Package type**: TO-263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 120A
- **Technology**: Trench technology
Domain and module applications：
III. Application fields and module examples of IPB136N08N3 G-VB
1. **High-power DC-DC converter**: IPB136N08N3 G-VB is widely used in high-power DC-DC converters due to its high current handling capability and low on-resistance. This MOSFET can operate stably under high current and high efficiency conditions, making it ideal for server power supplies, high-performance computer systems, and electric vehicle battery management modules.
2. **Electric vehicle motor drive**: In the motor control system of electric vehicles and hybrid vehicles, the high voltage and high current carrying capacity of IPB136N08N3 G-VB make it an ideal choice. This MOSFET can effectively control the motor drive current, improve the overall performance and energy efficiency of electric vehicles, and ensure the smooth operation of the motor.
3. **High-frequency switching power supply**: In high-frequency switching power supply applications, such as power supply for communication equipment and power supply for industrial equipment, the low on-resistance and excellent switching performance of IPB136N08N3 G-VB can reduce power loss and improve the conversion efficiency of the system. This makes it suitable for various power modules that require high-frequency switching operations.
4. **High-power LED driver**: In high-power LED lighting systems, the IPB136N08N3 G-VB MOSFET can be used in LED driver circuits to provide stable current control. The high current handling capability and low power consumption characteristics of this MOSFET make it very suitable for high-brightness LED lighting solutions such as street lighting and industrial lighting systems.
In summary, the IPB136N08N3 G-VB MOSFET is widely used in high-power DC-DC converters, electric vehicle motor drives, high-frequency switching power supplies, and high-power LED lighting, etc., with its high voltage, high current carrying capacity and low on-resistance, providing efficient and stable power management solutions.
1. **High-power DC-DC converter**: IPB136N08N3 G-VB is widely used in high-power DC-DC converters due to its high current handling capability and low on-resistance. This MOSFET can operate stably under high current and high efficiency conditions, making it ideal for server power supplies, high-performance computer systems, and electric vehicle battery management modules.
2. **Electric vehicle motor drive**: In the motor control system of electric vehicles and hybrid vehicles, the high voltage and high current carrying capacity of IPB136N08N3 G-VB make it an ideal choice. This MOSFET can effectively control the motor drive current, improve the overall performance and energy efficiency of electric vehicles, and ensure the smooth operation of the motor.
3. **High-frequency switching power supply**: In high-frequency switching power supply applications, such as power supply for communication equipment and power supply for industrial equipment, the low on-resistance and excellent switching performance of IPB136N08N3 G-VB can reduce power loss and improve the conversion efficiency of the system. This makes it suitable for various power modules that require high-frequency switching operations.
4. **High-power LED driver**: In high-power LED lighting systems, the IPB136N08N3 G-VB MOSFET can be used in LED driver circuits to provide stable current control. The high current handling capability and low power consumption characteristics of this MOSFET make it very suitable for high-brightness LED lighting solutions such as street lighting and industrial lighting systems.
In summary, the IPB136N08N3 G-VB MOSFET is widely used in high-power DC-DC converters, electric vehicle motor drives, high-frequency switching power supplies, and high-power LED lighting, etc., with its high voltage, high current carrying capacity and low on-resistance, providing efficient and stable power management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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