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IPB12CNE8N G-VB Product details
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IPB12CNE8N G-VB Product Introduction
IPB12CNE8N G-VB is a high-efficiency N-type power MOSFET packaged in TO263, designed for high voltage and high current applications. It has a maximum drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, suitable for applications requiring high power and high efficiency. The threshold voltage of this MOSFET is 3V, combined with Trench technology to achieve extremely low on-resistance. The IPB12CNE8N G-VB has an on-resistance of 10mΩ at VGS=4.5V and 6mΩ at VGS=10V, and can carry a drain current of up to 120A. Its design provides excellent switching performance and low power loss, making it ideal for a variety of high-power power supplies and motor drive applications.
IPB12CNE8N G-VB is a high-efficiency N-type power MOSFET packaged in TO263, designed for high voltage and high current applications. It has a maximum drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, suitable for applications requiring high power and high efficiency. The threshold voltage of this MOSFET is 3V, combined with Trench technology to achieve extremely low on-resistance. The IPB12CNE8N G-VB has an on-resistance of 10mΩ at VGS=4.5V and 6mΩ at VGS=10V, and can carry a drain current of up to 120A. Its design provides excellent switching performance and low power loss, making it ideal for a variety of high-power power supplies and motor drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IPB12CNE8N G-VB parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ@VGS=4.5V
- 6mΩ@VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ@VGS=4.5V
- 6mΩ@VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench technology
Domain and module applications：
Application fields and modules of IPB12CNE8N G-VB
The high current and low on-resistance characteristics of IPB12CNE8N G-VB enable it to perform well in the following fields and modules:
1. **High-power power management**: In high-power DC-DC converters and switching power supplies, IPB12CNE8N G-VB can provide efficient power conversion and stable current output. Its low on-resistance reduces energy loss, making the power system more efficient, and is suitable for power management systems that require high current and high efficiency.
2. **Electric vehicles and new energy vehicles**: In the battery management system, powertrain and motor drive of electric vehicles and hybrid vehicles, the high current handling capability and low on-resistance provided by IPB12CNE8N G-VB can effectively support the efficient operation of batteries and motors, and improve the energy efficiency and performance of the entire vehicle system.
3. **Industrial automation and motor drive**: This MOSFET is widely used in industrial motor drive and automation equipment. Its high current carrying capacity and excellent switching performance make it suitable for motor control, starting and drive applications, ensuring stable operation of equipment under high load.
4. **Data Center and Computer Power Supply**: In data centers and high-performance computer power supply systems, the low on-resistance and high current capability of IPB12CNE8N G-VB improve the efficiency of power modules, reduce power consumption and heat, and increase system reliability and operating efficiency.
5. **Solar Inverter and Renewable Energy System**: In solar inverters and other renewable energy applications, IPB12CNE8N G-VB can be used for power conversion and power management, helping to improve the system's power conversion efficiency, reduce energy loss, and enhance the overall system performance and reliability.
The high current and low on-resistance characteristics of IPB12CNE8N G-VB enable it to perform well in the following fields and modules:
1. **High-power power management**: In high-power DC-DC converters and switching power supplies, IPB12CNE8N G-VB can provide efficient power conversion and stable current output. Its low on-resistance reduces energy loss, making the power system more efficient, and is suitable for power management systems that require high current and high efficiency.
2. **Electric vehicles and new energy vehicles**: In the battery management system, powertrain and motor drive of electric vehicles and hybrid vehicles, the high current handling capability and low on-resistance provided by IPB12CNE8N G-VB can effectively support the efficient operation of batteries and motors, and improve the energy efficiency and performance of the entire vehicle system.
3. **Industrial automation and motor drive**: This MOSFET is widely used in industrial motor drive and automation equipment. Its high current carrying capacity and excellent switching performance make it suitable for motor control, starting and drive applications, ensuring stable operation of equipment under high load.
4. **Data Center and Computer Power Supply**: In data centers and high-performance computer power supply systems, the low on-resistance and high current capability of IPB12CNE8N G-VB improve the efficiency of power modules, reduce power consumption and heat, and increase system reliability and operating efficiency.
5. **Solar Inverter and Renewable Energy System**: In solar inverters and other renewable energy applications, IPB12CNE8N G-VB can be used for power conversion and power management, helping to improve the system's power conversion efficiency, reduce energy loss, and enhance the overall system performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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