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IPB12CN10N G-VB Product details
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1. IPB12CN10N G-VB Product Introduction:
IPB12CN10N G-VB is a high-performance N-channel MOSFET provided by Infineon, packaged in TO263. This MOSFET is designed for high voltage and high current applications, with a maximum drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) withstand voltage of ±20V. Its threshold voltage (Vth) is 2.5V, ensuring reliable switching operation. The on-resistance (RDS(ON)) of IPB12CN10N G-VB is 23mΩ at VGS=4.5V, which drops to 10mΩ at VGS=10V, and the drain current (ID) can reach 100A. It adopts advanced Trench technology, providing excellent switching performance and high efficiency, and is suitable for various application scenarios requiring high power handling and voltage control.
IPB12CN10N G-VB is a high-performance N-channel MOSFET provided by Infineon, packaged in TO263. This MOSFET is designed for high voltage and high current applications, with a maximum drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) withstand voltage of ±20V. Its threshold voltage (Vth) is 2.5V, ensuring reliable switching operation. The on-resistance (RDS(ON)) of IPB12CN10N G-VB is 23mΩ at VGS=4.5V, which drops to 10mΩ at VGS=10V, and the drain current (ID) can reach 100A. It adopts advanced Trench technology, providing excellent switching performance and high efficiency, and is suitable for various application scenarios requiring high power handling and voltage control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. IPB12CN10N G-VB Detailed parameter description:
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology type**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology type**: Trench
Domain and module applications：
3. Application fields and modules:
1. **High-efficiency DC-DC converters**:
IPB12CN10N G-VB is very suitable for use in high-efficiency DC-DC converters, especially those that need to handle high voltage and high current. Its low on-resistance can effectively reduce power consumption and improve conversion efficiency, making it a key component in power management systems. It is widely used in server power supplies, power supplies, and network equipment.
2. **Electric vehicle (EV) control system**:
In the motor control system of electric vehicles, the high current carrying capacity and high voltage tolerance of this MOSFET make it suitable for motor drive and battery management systems. Its low on-resistance ensures efficient operation at high power, improving the overall performance and reliability of electric vehicles.
3. **Industrial power supply and motor drive**:
IPB12CN10N G-VB is also suitable for a variety of industrial power supply and motor drive applications. Its high current and high voltage handling capabilities make it suitable for use in motor control, power supply, and automation equipment, providing stable power output and efficient power management.
4. **Power protection circuit**:
In the power protection circuit, this MOSFET can provide reliable switch control to protect the power system from overvoltage and overcurrent. Its low on-resistance and high voltage tolerance ensure the safety and stability of the power system, and is widely used in power protection and overload protection modules.
Through these application examples, IPB12CN10N G-VB demonstrates its wide applicability in high voltage, high current and high efficiency applications, making it an ideal choice for various power management and power conversion systems.
1. **High-efficiency DC-DC converters**:
IPB12CN10N G-VB is very suitable for use in high-efficiency DC-DC converters, especially those that need to handle high voltage and high current. Its low on-resistance can effectively reduce power consumption and improve conversion efficiency, making it a key component in power management systems. It is widely used in server power supplies, power supplies, and network equipment.
2. **Electric vehicle (EV) control system**:
In the motor control system of electric vehicles, the high current carrying capacity and high voltage tolerance of this MOSFET make it suitable for motor drive and battery management systems. Its low on-resistance ensures efficient operation at high power, improving the overall performance and reliability of electric vehicles.
3. **Industrial power supply and motor drive**:
IPB12CN10N G-VB is also suitable for a variety of industrial power supply and motor drive applications. Its high current and high voltage handling capabilities make it suitable for use in motor control, power supply, and automation equipment, providing stable power output and efficient power management.
4. **Power protection circuit**:
In the power protection circuit, this MOSFET can provide reliable switch control to protect the power system from overvoltage and overcurrent. Its low on-resistance and high voltage tolerance ensure the safety and stability of the power system, and is widely used in power protection and overload protection modules.
Through these application examples, IPB12CN10N G-VB demonstrates its wide applicability in high voltage, high current and high efficiency applications, making it an ideal choice for various power management and power conversion systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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