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IPB123N10N3 G-VB Product details
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Product Introduction
**IPB123N10N3 G-VB** is a highly efficient N-Channel MOSFET in TO263 package, manufactured based on advanced Trench technology. This MOSFET has excellent current handling capability and moderate on-resistance, can support up to 100A continuous current, and its maximum drain-source voltage is 100V. These features make the IPB123N10N3 G-VB perform well in high voltage and high current applications, and is very suitable for power management, electric vehicles, and industrial automation.
**IPB123N10N3 G-VB** is a highly efficient N-Channel MOSFET in TO263 package, manufactured based on advanced Trench technology. This MOSFET has excellent current handling capability and moderate on-resistance, can support up to 100A continuous current, and its maximum drain-source voltage is 100V. These features make the IPB123N10N3 G-VB perform well in high voltage and high current applications, and is very suitable for power management, electric vehicles, and industrial automation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ (at VGS = 4.5V)
- 10mΩ (at VGS = 10V)
- **Maximum continuous current (ID)**: 100A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ (at VGS = 4.5V)
- 10mΩ (at VGS = 10V)
- **Maximum continuous current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management system**:
**IPB123N10N3 G-VB**'s high voltage and high current capabilities make it ideal for use in power management systems, including DC-DC converters and power switch modules. In these applications, it can efficiently handle high currents while reducing conduction losses, improving power conversion efficiency, and ensuring system stability and reliability.
2. **Electric vehicles**:
In the field of electric vehicles, this MOSFET can be used in battery management systems, motor drives, and charging controllers. Its low RDS(ON) and high current handling capabilities can effectively support high-power power transmission and management in electric vehicles, ensure stable operation of the system under high-power loads, and improve overall energy efficiency.
3. **Industrial automation and control**:
In industrial automation and control systems, **IPB123N10N3 G-VB** is suitable for driving motors and controlling high-power devices. It can provide stable performance in high-voltage environments, and its low on-resistance helps improve the system's power conversion efficiency. Its high current capability also makes it suitable for industrial applications that require frequent switching and high power handling.
4. **High Power Switching Applications**:
**IPB123N10N3 G-VB** is also widely used in high power switching applications such as load switches and power amplifiers. Its high current capability and low RDS(ON) can effectively manage and control high current loads, reduce switching losses, and is suitable for switching operations that require high efficiency and high stability.
1. **Power management system**:
**IPB123N10N3 G-VB**'s high voltage and high current capabilities make it ideal for use in power management systems, including DC-DC converters and power switch modules. In these applications, it can efficiently handle high currents while reducing conduction losses, improving power conversion efficiency, and ensuring system stability and reliability.
2. **Electric vehicles**:
In the field of electric vehicles, this MOSFET can be used in battery management systems, motor drives, and charging controllers. Its low RDS(ON) and high current handling capabilities can effectively support high-power power transmission and management in electric vehicles, ensure stable operation of the system under high-power loads, and improve overall energy efficiency.
3. **Industrial automation and control**:
In industrial automation and control systems, **IPB123N10N3 G-VB** is suitable for driving motors and controlling high-power devices. It can provide stable performance in high-voltage environments, and its low on-resistance helps improve the system's power conversion efficiency. Its high current capability also makes it suitable for industrial applications that require frequent switching and high power handling.
4. **High Power Switching Applications**:
**IPB123N10N3 G-VB** is also widely used in high power switching applications such as load switches and power amplifiers. Its high current capability and low RDS(ON) can effectively manage and control high current loads, reduce switching losses, and is suitable for switching operations that require high efficiency and high stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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