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IPB120P04P4L-03-VB Product details
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IPB120P04P4L-03-VB is a high-performance P-channel MOSFET in TO263 package, designed for low voltage and high current applications. It has a drain-source voltage (VDS) of -40V and a drain current (ID) capability of -110A, suitable for operation in high current and high switching frequency environments. The on-resistance (RDS(ON)) of this MOSFET is 8.28mΩ at VGS=4.5V and 4.1mΩ at VGS=10V. It uses advanced Trench technology to provide excellent switching characteristics and thermal management performance. IPB120P04P4L-03-VB is an ideal choice for high-efficiency power management and power conversion systems.
**IPB120P04P4L-03-VB
IPB120P04P4L-03-VB is a high-performance P-channel MOSFET in TO263 package, designed for low voltage and high current applications. It has a drain-source voltage (VDS) of -40V and a drain current (ID) capability of -110A, suitable for operation in high current and high switching frequency environments. The on-resistance (RDS(ON)) of this MOSFET is 8.28mΩ at VGS=4.5V and 4.1mΩ at VGS=10V. It uses advanced Trench technology to provide excellent switching characteristics and thermal management performance. IPB120P04P4L-03-VB is an ideal choice for high-efficiency power management and power conversion systems.
**IPB120P04P4L-03-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | 4.1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
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- **Package**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage(VDS)**: -40V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: -2.5V
- **On-resistance(RDS(ON))**: 8.28mΩ @ VGS=4.5V
- **On-resistance(RDS(ON))**: 4.1mΩ @ VGS=10V
- **Drain current(ID)**: -110A
- **Technology**: Trench
**
- **Package**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage(VDS)**: -40V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: -2.5V
- **On-resistance(RDS(ON))**: 8.28mΩ @ VGS=4.5V
- **On-resistance(RDS(ON))**: 4.1mΩ @ VGS=10V
- **Drain current(ID)**: -110A
- **Technology**: Trench
**
Domain and module applications：
1. **DC-DC Converters**
The IPB120P04P4L-03-VB is ideal for use as a low-side switch or high-side switch in DC-DC converters. Its low on-resistance and high current handling capability reduce power consumption and improve conversion efficiency, making it ideal for computer power supplies, communication equipment, and power management modules for consumer electronics.
2. **Electric Vehicle (EV) Battery Management System**
In the battery management system (BMS) of electric vehicles, the IPB120P04P4L-03-VB can be used as a battery switch or protection switch. Its high current handling capability and low on-resistance help improve battery charging efficiency and system safety while reducing energy loss.
3. **Automotive Electronics**
This MOSFET also performs well in automotive electronics, such as in vehicle power modules, control systems, and electric seat controls. Its high current and low on-resistance characteristics enable it to efficiently manage and switch power, improving the overall performance and reliability of automotive electronic systems.
4. **Power switch and load switch**
IPB120P04P4L-03-VB is also very suitable for use as a power switch and load switch, providing high efficiency in various power switch applications. For example, in industrial control systems, it can control high current loads, support high-efficiency power switching and load management, and improve the overall stability and efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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