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IPB120P04P4-04-VB Product details
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IPB120P04P4-04-VB Product Introduction
IPB120P04P4-04-VB is a high-performance P-channel MOSFET in TO263 package, designed for high current and low voltage applications. It combines Trench technology to provide extremely low on-resistance (RDS(ON)) and high switching efficiency, suitable for applications requiring efficient switching and low power consumption. The MOSFET can withstand drain-source voltages up to -40V, has a low turn-on threshold voltage and high current capability, ensuring stable and reliable performance in a variety of harsh environments.
IPB120P04P4-04-VB is a high-performance P-channel MOSFET in TO263 package, designed for high current and low voltage applications. It combines Trench technology to provide extremely low on-resistance (RDS(ON)) and high switching efficiency, suitable for applications requiring efficient switching and low power consumption. The MOSFET can withstand drain-source voltages up to -40V, has a low turn-on threshold voltage and high current capability, ensuring stable and reliable performance in a variety of harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | 4.1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
IPB120P04P4-04-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -40V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**: 8.28mΩ @ VGS=4.5V, 4.1mΩ @ VGS=10V
- **Maximum drain current (ID)**: -110A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -40V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**: 8.28mΩ @ VGS=4.5V, 4.1mΩ @ VGS=10V
- **Maximum drain current (ID)**: -110A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management systems**: The IPB120P04P4-04-VB is ideal for power management and converter applications such as DC-DC converters and point-of-load (POL) modules. In these applications, the low on-resistance and high current capability of the MOSFET help improve power conversion efficiency and reduce energy losses.
2. **Consumer electronics**: In power management systems for laptops, smartphones, and other portable devices, the IPB120P04P4-04-VB provides an efficient power switch solution. Its low turn-on threshold voltage and low on-resistance enable it to optimize battery life and improve the overall performance of the device.
3. **Automotive electronics**: This MOSFET can be used in automotive battery management systems (BMS) and motor control modules for electric vehicles. Its high current handling capability and low power consumption ensure the stability and efficiency of the automotive power system, while improving the durability and reliability of the system.
4. **Industrial Control**: In industrial applications, such as motor drives and high-power switch modules, the high current capability and low on-resistance of the IPB120P04P4-04-VB help achieve efficient power control and management. Its stable performance can improve the efficiency and reliability of industrial equipment and reduce maintenance costs.
In general, the IPB120P04P4-04-VB is widely used in power management, consumer electronics, automotive electronics, and industrial control fields due to its high current, high efficiency, and low power consumption.
1. **Power management systems**: The IPB120P04P4-04-VB is ideal for power management and converter applications such as DC-DC converters and point-of-load (POL) modules. In these applications, the low on-resistance and high current capability of the MOSFET help improve power conversion efficiency and reduce energy losses.
2. **Consumer electronics**: In power management systems for laptops, smartphones, and other portable devices, the IPB120P04P4-04-VB provides an efficient power switch solution. Its low turn-on threshold voltage and low on-resistance enable it to optimize battery life and improve the overall performance of the device.
3. **Automotive electronics**: This MOSFET can be used in automotive battery management systems (BMS) and motor control modules for electric vehicles. Its high current handling capability and low power consumption ensure the stability and efficiency of the automotive power system, while improving the durability and reliability of the system.
4. **Industrial Control**: In industrial applications, such as motor drives and high-power switch modules, the high current capability and low on-resistance of the IPB120P04P4-04-VB help achieve efficient power control and management. Its stable performance can improve the efficiency and reliability of industrial equipment and reduce maintenance costs.
In general, the IPB120P04P4-04-VB is widely used in power management, consumer electronics, automotive electronics, and industrial control fields due to its high current, high efficiency, and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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