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IPB120N06S4-H1-VB Product details
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Product Introduction
IPB120N06S4-H1-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and medium voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V and the maximum on-current (ID) is 270A. Its on-resistance is 7mΩ at a gate drive voltage of 4.5V and 2.5mΩ at 10V, showing its excellent low power consumption characteristics. Using advanced trench technology (Trench), this MOSFET has excellent switching performance and efficient current handling capabilities, which is very suitable for application scenarios that require high current handling and low power consumption operation.
IPB120N06S4-H1-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and medium voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V and the maximum on-current (ID) is 270A. Its on-resistance is 7mΩ at a gate drive voltage of 4.5V and 2.5mΩ at 10V, showing its excellent low power consumption characteristics. Using advanced trench technology (Trench), this MOSFET has excellent switching performance and efficient current handling capabilities, which is very suitable for application scenarios that require high current handling and low power consumption operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | 2.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 7mΩ
- @ VGS = 10V: 2.5mΩ
- **Maximum on-current (ID)**: 270A
- **Technology type**: Trench
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 7mΩ
- @ VGS = 10V: 2.5mΩ
- **Maximum on-current (ID)**: 270A
- **Technology type**: Trench
Domain and module applications：
Application fields and module examples: The high current handling capability and low on-resistance of the IPB120N06S4-H1-VB MOSFET make it very useful in multiple fields and modules. First, in efficient power management systems, such as DC-DC converters, it can efficiently handle large currents, reduce energy losses, and improve the overall efficiency of the system. Secondly, in switching power supply (SMPS) applications, this MOSFET can provide a stable current supply while reducing power losses, which is particularly suitable for scenarios with high power and high current requirements. In addition, due to its excellent switching performance, this MOSFET is also suitable for the power system and battery management system (BMS) of electric vehicles, and can provide reliable current control under high current and medium voltage conditions to ensure the safety and stability of the system. This MOSFET is an ideal choice in motor drives, power conversion, and high-efficiency power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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