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IPB120N06S4-02-VB Product details
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1. Product Introduction
IPB120N06S4-02-VB is a high-performance single N-channel MOSFET packaged in TO263. The MOSFET supports drain-source voltage (VDS) up to 60V and gate voltage (VGS) of ±20V, with a turn-on voltage (Vth) of 3V. Its on-resistance (RDS(ON)) is 7mΩ@VGS=4.5V and 2.5mΩ@VGS=10V, and it can handle drain current (ID) up to 270A. Using advanced Trench technology, this MOSFET provides excellent conduction performance and low power consumption, and is suitable for a variety of high-current, high-efficiency application scenarios.
IPB120N06S4-02-VB is a high-performance single N-channel MOSFET packaged in TO263. The MOSFET supports drain-source voltage (VDS) up to 60V and gate voltage (VGS) of ±20V, with a turn-on voltage (Vth) of 3V. Its on-resistance (RDS(ON)) is 7mΩ@VGS=4.5V and 2.5mΩ@VGS=10V, and it can handle drain current (ID) up to 270A. Using advanced Trench technology, this MOSFET provides excellent conduction performance and low power consumption, and is suitable for a variety of high-current, high-efficiency application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | 2.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS=4.5V
- 2.5mΩ @ VGS=10V
- **Drain current (ID)**: 270A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS=4.5V
- 2.5mΩ @ VGS=10V
- **Drain current (ID)**: 270A
- **Technology**: Trench technology
Domain and module applications：
3. Application fields and module examples
1. **High-efficiency power management**: IPB120N06S4-02-VB is suitable for use in high-efficiency power management systems, such as computer power supplies and industrial power supplies. Its low on-resistance and high current handling capability can effectively reduce power loss and improve power efficiency, and is suitable for applications requiring high power and high efficiency.
2. **Electric vehicle (EV) battery management system**: In the battery management system of electric vehicles, this MOSFET can withstand high current and high voltage, and is suitable for battery charge and discharge control. Its high current handling capability and low on-resistance can improve the efficiency and safety of the battery system.
3. **Switch mode power supply (SMPS)**: IPB120N06S4-02-VB performs well in switch mode power supply modules and can support high-power power conversion applications. Its low RDS(ON) performance helps reduce power loss and improve the overall system energy efficiency, and is suitable for adapters, chargers and other high-power power supplies.
4. **Motor drive**: In motor drive applications, the high current carrying capacity and low power consumption of this MOSFET enable it to effectively drive high-power motors, making it suitable for power tools and industrial motor control systems to ensure efficient and stable motor operation.
5. **Energy conversion and distribution**: In energy conversion and distribution modules, such as inverters for renewable energy systems, this MOSFET is able to handle high current and high power, effectively improving the conversion efficiency and reliability of the system.
With its excellent current handling capability and low power consumption, IPB120N06S4-02-VB provides an ideal solution for a variety of high-power, high-efficiency applications, ensuring system performance and stability.
1. **High-efficiency power management**: IPB120N06S4-02-VB is suitable for use in high-efficiency power management systems, such as computer power supplies and industrial power supplies. Its low on-resistance and high current handling capability can effectively reduce power loss and improve power efficiency, and is suitable for applications requiring high power and high efficiency.
2. **Electric vehicle (EV) battery management system**: In the battery management system of electric vehicles, this MOSFET can withstand high current and high voltage, and is suitable for battery charge and discharge control. Its high current handling capability and low on-resistance can improve the efficiency and safety of the battery system.
3. **Switch mode power supply (SMPS)**: IPB120N06S4-02-VB performs well in switch mode power supply modules and can support high-power power conversion applications. Its low RDS(ON) performance helps reduce power loss and improve the overall system energy efficiency, and is suitable for adapters, chargers and other high-power power supplies.
4. **Motor drive**: In motor drive applications, the high current carrying capacity and low power consumption of this MOSFET enable it to effectively drive high-power motors, making it suitable for power tools and industrial motor control systems to ensure efficient and stable motor operation.
5. **Energy conversion and distribution**: In energy conversion and distribution modules, such as inverters for renewable energy systems, this MOSFET is able to handle high current and high power, effectively improving the conversion efficiency and reliability of the system.
With its excellent current handling capability and low power consumption, IPB120N06S4-02-VB provides an ideal solution for a variety of high-power, high-efficiency applications, ensuring system performance and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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