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IPB120N04S4-01-VB Product details
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Product Introduction:
IPB120N04S4-01-VB is a high-performance single N-channel MOSFET in TO263 package, designed for low voltage and high current applications. The drain-source voltage (VDS) of this MOSFET is 40V, which is suitable for circuits that handle medium voltages. Its on-resistance (RDS(ON)) is only 2mΩ at VGS of 10V, providing extremely low conduction losses. Using Trench technology, the device has excellent switching performance and high current handling capability, making it very suitable for electronic modules that require high performance and low power consumption.
IPB120N04S4-01-VB is a high-performance single N-channel MOSFET in TO263 package, designed for low voltage and high current applications. The drain-source voltage (VDS) of this MOSFET is 40V, which is suitable for circuits that handle medium voltages. Its on-resistance (RDS(ON)) is only 2mΩ at VGS of 10V, providing extremely low conduction losses. Using Trench technology, the device has excellent switching performance and high current handling capability, making it very suitable for electronic modules that require high performance and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ@VGS=4.5V
- 2mΩ@VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology, providing low on-resistance and high switching speed
- **Thermal resistance (Rth(ja))**: Typical value is about 62 K/W
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ@VGS=4.5V
- 2mΩ@VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology, providing low on-resistance and high switching speed
- **Thermal resistance (Rth(ja))**: Typical value is about 62 K/W
Domain and module applications：
Applicable fields and module applications:
1. **Switching mode power supply (SMPS)**: IPB120N04S4-01-VB is very suitable for switching mode power supply (SMPS). Its low on-resistance and high current capability can significantly reduce switching losses and improve system efficiency. It is particularly suitable for high-power power modules and voltage regulators to help improve overall energy efficiency.
2. **Electric vehicle (EV) charging and battery management system**: In the battery management system (BMS) of electric vehicles, the high current handling capability and low conduction loss characteristics of this MOSFET can effectively manage the charging and discharging process and ensure the stability and efficiency of the battery system.
3. **Industrial motor drive**: IPB120N04S4-01-VB is suitable for various industrial motor drive systems, such as inverters and servo drives. Its high current carrying capacity and low power consumption ensure the efficient operation of the motor drive system and reduce heat generation.
4. **Efficient power management**: In high-density data centers and server power modules, the characteristics of this MOSFET make it very suitable for power management systems. It can effectively handle high-power loads, provide stable current output, and ensure high efficiency and reliability of the system.
5. **Power protection circuit**: The low on-resistance and high current handling capability of IPB120N04S4-01-VB make it suitable for power protection circuits. It can effectively control the current and prevent overcurrent conditions, thereby protecting the safety and stability of the entire electronic system.
1. **Switching mode power supply (SMPS)**: IPB120N04S4-01-VB is very suitable for switching mode power supply (SMPS). Its low on-resistance and high current capability can significantly reduce switching losses and improve system efficiency. It is particularly suitable for high-power power modules and voltage regulators to help improve overall energy efficiency.
2. **Electric vehicle (EV) charging and battery management system**: In the battery management system (BMS) of electric vehicles, the high current handling capability and low conduction loss characteristics of this MOSFET can effectively manage the charging and discharging process and ensure the stability and efficiency of the battery system.
3. **Industrial motor drive**: IPB120N04S4-01-VB is suitable for various industrial motor drive systems, such as inverters and servo drives. Its high current carrying capacity and low power consumption ensure the efficient operation of the motor drive system and reduce heat generation.
4. **Efficient power management**: In high-density data centers and server power modules, the characteristics of this MOSFET make it very suitable for power management systems. It can effectively handle high-power loads, provide stable current output, and ensure high efficiency and reliability of the system.
5. **Power protection circuit**: The low on-resistance and high current handling capability of IPB120N04S4-01-VB make it suitable for power protection circuits. It can effectively control the current and prevent overcurrent conditions, thereby protecting the safety and stability of the entire electronic system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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