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IPB120N04S3-02-VB Product details
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1. Product Introduction
**IPB120N04S3-02-VB** is a high-performance single N-channel MOSFET in TO263 package. Designed for high current and high power density applications, this MOSFET features a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V. Using Trench technology, the device has an on-resistance of 2.5mΩ at a gate-source voltage of 4.5V and 2mΩ at 10V, capable of supporting a continuous drain current (ID) of up to 150A. This design makes the IPB120N04S3-02-VB MOSFET particularly suitable for applications requiring low power consumption and high efficiency.
**IPB120N04S3-02-VB** is a high-performance single N-channel MOSFET in TO263 package. Designed for high current and high power density applications, this MOSFET features a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V. Using Trench technology, the device has an on-resistance of 2.5mΩ at a gate-source voltage of 4.5V and 2mΩ at 10V, capable of supporting a continuous drain current (ID) of up to 150A. This design makes the IPB120N04S3-02-VB MOSFET particularly suitable for applications requiring low power consumption and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Model**: IPB120N04S3-02-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Switching time**: Suitable for high frequency operation
- **Gate charge (Qg)**: High performance switch, suitable for high switching frequency applications
- **Model**: IPB120N04S3-02-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Switching time**: Suitable for high frequency operation
- **Gate charge (Qg)**: High performance switch, suitable for high switching frequency applications
Domain and module applications：
3. Applicable fields and modules
**IPB120N04S3-02-VB** MOSFET's low on-resistance and high current handling capability make it widely used in multiple fields and modules. Here are some typical application scenarios:
- **Power management**: This MOSFET can be used in high-current DC-DC converters, power regulators, and power modules. Due to its low on-resistance, it can effectively improve conversion efficiency and reduce power consumption, and is suitable for high-power density devices such as industrial power supplies, server power supplies, and high-power power adapters.
- **Electric Vehicles (EV)**: In battery management systems (BMS) and electric drive systems, IPB120N04S3-02-VB can provide stable high current control and optimize the performance of batteries and motors. Its low on-resistance helps improve the efficiency of battery management systems and the endurance of electric drive systems.
- **Motor drive**: In industrial automation and robotic systems, this MOSFET can be used in motor drive modules to provide stable current and efficient power management, suitable for applications requiring high current and low power consumption.
- **Uninterruptible power supply (UPS)**: In UPS systems and inverters, the high current handling capability and low on-resistance of the MOSFET ensure efficient power output and improve the overall stability and reliability of the system.
- **Consumer electronics**: This MOSFET is also suitable for high-efficiency chargers and power modules, which can reduce power loss and improve energy transfer efficiency, thereby extending battery life and improving device performance.
In summary, the **IPB120N04S3-02-VB** MOSFET is suitable for high-efficiency and high-power density applications with its low on-resistance, high current handling capability and superior switching performance, which helps to improve the overall efficiency and reliability of the system.
**IPB120N04S3-02-VB** MOSFET's low on-resistance and high current handling capability make it widely used in multiple fields and modules. Here are some typical application scenarios:
- **Power management**: This MOSFET can be used in high-current DC-DC converters, power regulators, and power modules. Due to its low on-resistance, it can effectively improve conversion efficiency and reduce power consumption, and is suitable for high-power density devices such as industrial power supplies, server power supplies, and high-power power adapters.
- **Electric Vehicles (EV)**: In battery management systems (BMS) and electric drive systems, IPB120N04S3-02-VB can provide stable high current control and optimize the performance of batteries and motors. Its low on-resistance helps improve the efficiency of battery management systems and the endurance of electric drive systems.
- **Motor drive**: In industrial automation and robotic systems, this MOSFET can be used in motor drive modules to provide stable current and efficient power management, suitable for applications requiring high current and low power consumption.
- **Uninterruptible power supply (UPS)**: In UPS systems and inverters, the high current handling capability and low on-resistance of the MOSFET ensure efficient power output and improve the overall stability and reliability of the system.
- **Consumer electronics**: This MOSFET is also suitable for high-efficiency chargers and power modules, which can reduce power loss and improve energy transfer efficiency, thereby extending battery life and improving device performance.
In summary, the **IPB120N04S3-02-VB** MOSFET is suitable for high-efficiency and high-power density applications with its low on-resistance, high current handling capability and superior switching performance, which helps to improve the overall efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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