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IPB11N03LA G-VB Product details
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1. Product Introduction of IPB11N03LA G-VB MOSFET
IPB11N03LA G-VB is a high-performance N-channel power MOSFET in TO-263 package, designed for switching applications that require high performance and stability. With a maximum drain-source voltage (VDS) of 30V, this MOSFET can handle a continuous drain current of up to 50A, making it ideal for use in power control and power management systems. Its low on-resistance characteristic is derived from advanced trench technology, which enables efficient conduction even at low gate voltages, providing stable and reliable performance. IPB11N03LA G-VB is particularly suitable for applications that require low power consumption and high current handling.
IPB11N03LA G-VB is a high-performance N-channel power MOSFET in TO-263 package, designed for switching applications that require high performance and stability. With a maximum drain-source voltage (VDS) of 30V, this MOSFET can handle a continuous drain current of up to 50A, making it ideal for use in power control and power management systems. Its low on-resistance characteristic is derived from advanced trench technology, which enables efficient conduction even at low gate voltages, providing stable and reliable performance. IPB11N03LA G-VB is particularly suitable for applications that require low power consumption and high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description of IPB11N03LA G-VB MOSFET
- **Package type**: TO-263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 50A
- **Technology**: Trench technology
- **Package type**: TO-263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 50A
- **Technology**: Trench technology
Domain and module applications：
III. Application fields and module examples of IPB11N03LA G-VB
1. **Power management module**: In power management systems, IPB11N03LA G-VB can be used in DC-DC converters and power switches. The low on-resistance of this MOSFET helps reduce power loss and improve power conversion efficiency, and is particularly suitable for medium-power power modules such as laptop adapters and other electronic equipment power management systems.
2. **Power tool driver**: Due to its high current carrying capacity and reliable switching performance, IPB11N03LA G-VB is suitable for motor control modules of power tools. This MOSFET can effectively manage the current in power tools and ensure stable motor drive, and is suitable for various high-load power tools and mechanical equipment.
3. **LED lighting driver**: In LED drive circuits, IPB11N03LA G-VB can be used to control the current of LEDs to ensure that they operate in an efficient and stable state. Its low on-resistance and high current handling capability make it suitable for high-power LED lighting systems such as industrial lighting and commercial lighting solutions.
4. **Automotive Electronic Systems**: In automotive electronic systems, such as battery management systems and power distribution modules, the high current carrying capacity and low power consumption characteristics of IPB11N03LA G-VB MOSFET can improve the overall efficiency and reliability of the system. This makes it an ideal choice for power control in electric and hybrid vehicles.
In summary, IPB11N03LA G-VB MOSFET is widely used in power management, power tool drive, LED lighting, automotive electronics and other fields with its excellent current handling capability, low on-resistance and efficient switching performance, providing strong support for efficient and reliable power control.
1. **Power management module**: In power management systems, IPB11N03LA G-VB can be used in DC-DC converters and power switches. The low on-resistance of this MOSFET helps reduce power loss and improve power conversion efficiency, and is particularly suitable for medium-power power modules such as laptop adapters and other electronic equipment power management systems.
2. **Power tool driver**: Due to its high current carrying capacity and reliable switching performance, IPB11N03LA G-VB is suitable for motor control modules of power tools. This MOSFET can effectively manage the current in power tools and ensure stable motor drive, and is suitable for various high-load power tools and mechanical equipment.
3. **LED lighting driver**: In LED drive circuits, IPB11N03LA G-VB can be used to control the current of LEDs to ensure that they operate in an efficient and stable state. Its low on-resistance and high current handling capability make it suitable for high-power LED lighting systems such as industrial lighting and commercial lighting solutions.
4. **Automotive Electronic Systems**: In automotive electronic systems, such as battery management systems and power distribution modules, the high current carrying capacity and low power consumption characteristics of IPB11N03LA G-VB MOSFET can improve the overall efficiency and reliability of the system. This makes it an ideal choice for power control in electric and hybrid vehicles.
In summary, IPB11N03LA G-VB MOSFET is widely used in power management, power tool drive, LED lighting, automotive electronics and other fields with its excellent current handling capability, low on-resistance and efficient switching performance, providing strong support for efficient and reliable power control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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