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IPB110N06L G-VB Product details
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IPB110N06L G-VB Product Introduction
IPB110N06L G-VB is a high-performance N-type power MOSFET in TO263 package, designed for high current and high-efficiency applications. This MOSFET supports a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, maintaining stable performance under various operating conditions. Its threshold voltage is 3V, combined with Trench technology, providing a lower on-resistance (4mΩ@VGS=10V), ensuring efficient switching performance and minimal power loss. The IPB110N06L G-VB has a maximum drain current of 150A, which is very suitable for applications that require high current handling and low on-resistance.
IPB110N06L G-VB is a high-performance N-type power MOSFET in TO263 package, designed for high current and high-efficiency applications. This MOSFET supports a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, maintaining stable performance under various operating conditions. Its threshold voltage is 3V, combined with Trench technology, providing a lower on-resistance (4mΩ@VGS=10V), ensuring efficient switching performance and minimal power loss. The IPB110N06L G-VB has a maximum drain current of 150A, which is very suitable for applications that require high current handling and low on-resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IPB110N06L G-VB parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ@VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ@VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Application fields and modules of IPB110N06L G-VB
The high current capability and low on-resistance of IPB110N06L G-VB make it widely used in the following fields and modules:
1. **Power management system**: In power management systems, especially high-power DC-DC converters and switching power supplies, IPB110N06L G-VB can provide efficient power conversion, reduce energy loss, support high current output, and is suitable for power supply designs that require stable current and high efficiency.
2. **Electric vehicles**: In the battery management system and electric drive system of electric vehicles and hybrid vehicles, the high current carrying capacity and low on-resistance of this MOSFET can optimize the power management of electric vehicles and improve the efficiency and reliability of the power system.
3. **Motor drive**: In power tools and industrial motor drive modules, the IPB110N06L G-VB can provide strong current handling capabilities and efficient switching performance for motor control, starting and drive applications, ensuring stable operation under high load conditions.
4. **Data center and server**: In data center and server power modules, the low on-resistance and high current handling capabilities provided by this MOSFET can improve power management efficiency, reduce power consumption and heat generation, thereby enhancing the overall performance and reliability of the system.
5. **Communication equipment**: In the power system of communication equipment, the efficient switching performance and low on-resistance of the IPB110N06L G-VB help improve the power conversion efficiency of the equipment, reduce power loss, and support stable operation of high-power and high-frequency applications.
The high current capability and low on-resistance of IPB110N06L G-VB make it widely used in the following fields and modules:
1. **Power management system**: In power management systems, especially high-power DC-DC converters and switching power supplies, IPB110N06L G-VB can provide efficient power conversion, reduce energy loss, support high current output, and is suitable for power supply designs that require stable current and high efficiency.
2. **Electric vehicles**: In the battery management system and electric drive system of electric vehicles and hybrid vehicles, the high current carrying capacity and low on-resistance of this MOSFET can optimize the power management of electric vehicles and improve the efficiency and reliability of the power system.
3. **Motor drive**: In power tools and industrial motor drive modules, the IPB110N06L G-VB can provide strong current handling capabilities and efficient switching performance for motor control, starting and drive applications, ensuring stable operation under high load conditions.
4. **Data center and server**: In data center and server power modules, the low on-resistance and high current handling capabilities provided by this MOSFET can improve power management efficiency, reduce power consumption and heat generation, thereby enhancing the overall performance and reliability of the system.
5. **Communication equipment**: In the power system of communication equipment, the efficient switching performance and low on-resistance of the IPB110N06L G-VB help improve the power conversion efficiency of the equipment, reduce power loss, and support stable operation of high-power and high-frequency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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