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IPB108N15N3G-VB Product details
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1. IPB108N15N3G-VB Product Introduction:
IPB108N15N3G-VB is a high-performance N-channel MOSFET produced by Infineon, using TO263 package, designed for high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET reaches 150V, which is suitable for handling power conversion requirements under high voltage conditions. Its maximum gate-source voltage (VGS) is ±20V, ensuring high switching safety. The on-resistance (RDS(ON)) of IPB108N15N3G-VB is 15mΩ at VGS=10V, and the drain current (ID) can reach 80A. It is manufactured using Trench technology, providing excellent switching speed and high efficiency, and is suitable for various application scenarios requiring high voltage and high power.
IPB108N15N3G-VB is a high-performance N-channel MOSFET produced by Infineon, using TO263 package, designed for high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET reaches 150V, which is suitable for handling power conversion requirements under high voltage conditions. Its maximum gate-source voltage (VGS) is ±20V, ensuring high switching safety. The on-resistance (RDS(ON)) of IPB108N15N3G-VB is 15mΩ at VGS=10V, and the drain current (ID) can reach 80A. It is manufactured using Trench technology, providing excellent switching speed and high efficiency, and is suitable for various application scenarios requiring high voltage and high power.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 80A | 15mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description of IPB108N15N3G-VB:
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 150V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 15mΩ @ VGS=10V
- **Maximum drain current (ID)**: 80A
- **Technology type**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 150V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 15mΩ @ VGS=10V
- **Maximum drain current (ID)**: 80A
- **Technology type**: Trench
Domain and module applications：
3. Application fields and modules:
1. **High voltage DC-DC converter**:
IPB108N15N3G-VB is very suitable for use in high voltage DC-DC converters. Its high drain-source voltage and low on-resistance enable it to efficiently convert power under high voltage conditions. It is widely used in power systems and high voltage power modules to provide stable voltage conversion and high efficiency.
2. **Electric vehicle (EV) drive system**:
In the drive system of electric vehicles, this MOSFET can handle the needs of high voltage and high current, and is suitable for motor control and battery management systems. Its high current handling capability and low power consumption characteristics ensure the reliability and efficiency of electric vehicles under high power operation, and improve the overall performance and endurance.
3. **Industrial power supply and motor control**:
IPB108N15N3G-VB is also suitable for industrial power supply and motor control applications. Its high voltage tolerance and high current handling capabilities enable it to handle high-power loads in industrial environments. It is widely used in motor drives, power supplies, and automation control systems to ensure system stability and efficiency.
4. **Power protection circuit**:
In the power protection circuit, this MOSFET can provide reliable switching control to protect the power system from overvoltage and overcurrent. Its high withstand voltage and low on-resistance ensure efficient and stable operation in the protection circuit, suitable for various power protection and overload protection applications.
The high voltage, high current handling capability, and low power consumption characteristics of IPB108N15N3G-VB enable it to perform well in these high-power, high-voltage applications, providing a reliable solution for various power management and conversion systems.
1. **High voltage DC-DC converter**:
IPB108N15N3G-VB is very suitable for use in high voltage DC-DC converters. Its high drain-source voltage and low on-resistance enable it to efficiently convert power under high voltage conditions. It is widely used in power systems and high voltage power modules to provide stable voltage conversion and high efficiency.
2. **Electric vehicle (EV) drive system**:
In the drive system of electric vehicles, this MOSFET can handle the needs of high voltage and high current, and is suitable for motor control and battery management systems. Its high current handling capability and low power consumption characteristics ensure the reliability and efficiency of electric vehicles under high power operation, and improve the overall performance and endurance.
3. **Industrial power supply and motor control**:
IPB108N15N3G-VB is also suitable for industrial power supply and motor control applications. Its high voltage tolerance and high current handling capabilities enable it to handle high-power loads in industrial environments. It is widely used in motor drives, power supplies, and automation control systems to ensure system stability and efficiency.
4. **Power protection circuit**:
In the power protection circuit, this MOSFET can provide reliable switching control to protect the power system from overvoltage and overcurrent. Its high withstand voltage and low on-resistance ensure efficient and stable operation in the protection circuit, suitable for various power protection and overload protection applications.
The high voltage, high current handling capability, and low power consumption characteristics of IPB108N15N3G-VB enable it to perform well in these high-power, high-voltage applications, providing a reliable solution for various power management and conversion systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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