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IPB108N15N3 G-VB Product details
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Product Introduction
**IPB108N15N3 G-VB** is a high-performance N-Channel MOSFET in TO263 package, manufactured based on advanced Trench technology. This MOSFET has extremely high voltage carrying capacity and low on-resistance, can support up to 128A continuous current, and has a maximum drain-source voltage of 150V. Its excellent switching performance and low conduction loss make it excellent in high-power applications, suitable for power management, industrial control, and electric vehicles.
**IPB108N15N3 G-VB** is a high-performance N-Channel MOSFET in TO263 package, manufactured based on advanced Trench technology. This MOSFET has extremely high voltage carrying capacity and low on-resistance, can support up to 128A continuous current, and has a maximum drain-source voltage of 150V. Its excellent switching performance and low conduction loss make it excellent in high-power applications, suitable for power management, industrial control, and electric vehicles.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 128A | 7.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 128A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 128A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 150V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7.5mΩ (at VGS = 10V)
- **Maximum continuous current (ID)**: 128A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 150V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7.5mΩ (at VGS = 10V)
- **Maximum continuous current (ID)**: 128A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **High voltage power management**:
**IPB108N15N3 G-VB**'s high voltage and high current capabilities make it particularly suitable for high voltage power management systems. It can be used in high voltage DC-DC converters and power switch modules to provide efficient power conversion and control. This feature is critical for high power devices that require a stable and reliable power supply.
2. **Industrial Automation and Control**:
In industrial automation systems, the high voltage carrying capacity and low on-resistance of this MOSFET make it suitable for driving high power devices and motor control. **IPB108N15N3 G-VB** can be used in industrial motor controllers and high power switches to ensure stable operation in harsh working environments and improve the efficiency and safety of the overall system.
3. **Electric Vehicles**:
In the field of electric vehicles, this MOSFET can be used in battery management systems and high power motor drive systems. Its high voltage and high current capabilities can support high power conversion and power management in electric vehicles, helping to improve vehicle performance and endurance.
4. **Power Protection and Switching Applications**:
**IPB108N15N3 G-VB** is also suitable for high power switching applications such as power protection circuits and load switching systems. Its high voltage and high current capabilities ensure that high power loads can be switched reliably, while its low on-resistance reduces switching losses and improves the overall efficiency and reliability of the system.
1. **High voltage power management**:
**IPB108N15N3 G-VB**'s high voltage and high current capabilities make it particularly suitable for high voltage power management systems. It can be used in high voltage DC-DC converters and power switch modules to provide efficient power conversion and control. This feature is critical for high power devices that require a stable and reliable power supply.
2. **Industrial Automation and Control**:
In industrial automation systems, the high voltage carrying capacity and low on-resistance of this MOSFET make it suitable for driving high power devices and motor control. **IPB108N15N3 G-VB** can be used in industrial motor controllers and high power switches to ensure stable operation in harsh working environments and improve the efficiency and safety of the overall system.
3. **Electric Vehicles**:
In the field of electric vehicles, this MOSFET can be used in battery management systems and high power motor drive systems. Its high voltage and high current capabilities can support high power conversion and power management in electric vehicles, helping to improve vehicle performance and endurance.
4. **Power Protection and Switching Applications**:
**IPB108N15N3 G-VB** is also suitable for high power switching applications such as power protection circuits and load switching systems. Its high voltage and high current capabilities ensure that high power loads can be switched reliably, while its low on-resistance reduces switching losses and improves the overall efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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