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IPB107N20N3 G-VB Product details
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IPB107N20N3 G-VB Product Introduction
The IPB107N20N3 G-VB is a high-performance N-channel MOSFET in a TO263 package, designed for high voltage and high current applications. With its Trench technology, the MOSFET provides extremely low on-resistance (RDS(ON)) and excellent switching performance, and can operate stably at high voltages. Its high current handling capability and high drain-source voltage make it excellent in power management and power control, and suitable for a variety of demanding applications.
The IPB107N20N3 G-VB is a high-performance N-channel MOSFET in a TO263 package, designed for high voltage and high current applications. With its Trench technology, the MOSFET provides extremely low on-resistance (RDS(ON)) and excellent switching performance, and can operate stably at high voltages. Its high current handling capability and high drain-source voltage make it excellent in power management and power control, and suitable for a variety of demanding applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 4V | 100A | 7.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IPB107N20N3 G-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**: 7.6mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**: 7.6mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Applications and Module Examples
1. **Power Management System**: The IPB107N20N3 G-VB is suitable for high voltage power converters and high power DC-DC converters. In these applications, its high voltage withstand capability and low on-resistance help optimize power conversion efficiency, reduce power consumption and heat generation, thereby improving overall system performance and reliability.
2. **Industrial Power Control**: In industrial applications such as inverters, motor drives and high power switching devices, the high current and high voltage handling capabilities of the IPB107N20N3 G-VB make it an ideal choice. Its stable performance and low loss characteristics can ensure reliable operation and high efficiency of the equipment in extreme working environments.
3. **Electric Vehicles and Hybrid Vehicles**: This MOSFET can be used in battery management systems (BMS) and motor control modules for electric and hybrid vehicles. The high voltage and high current capabilities of the IPB107N20N3 G-VB can handle the high power demands in automotive power systems, optimizing the efficiency of battery management and motor control.
4. **Power Conversion and Protection**: In power conversion and power protection modules, the IPB107N20N3 G-VB can be used for high voltage switches and protection circuits. Its high voltage tolerance and low on-resistance enable it to provide stable performance in these applications and effectively protect circuits from overvoltage and overcurrent.
With its high voltage, high current and low power consumption characteristics, the IPB107N20N3 G-VB is widely used in various high-performance, high-demand power supply and power control fields.
1. **Power Management System**: The IPB107N20N3 G-VB is suitable for high voltage power converters and high power DC-DC converters. In these applications, its high voltage withstand capability and low on-resistance help optimize power conversion efficiency, reduce power consumption and heat generation, thereby improving overall system performance and reliability.
2. **Industrial Power Control**: In industrial applications such as inverters, motor drives and high power switching devices, the high current and high voltage handling capabilities of the IPB107N20N3 G-VB make it an ideal choice. Its stable performance and low loss characteristics can ensure reliable operation and high efficiency of the equipment in extreme working environments.
3. **Electric Vehicles and Hybrid Vehicles**: This MOSFET can be used in battery management systems (BMS) and motor control modules for electric and hybrid vehicles. The high voltage and high current capabilities of the IPB107N20N3 G-VB can handle the high power demands in automotive power systems, optimizing the efficiency of battery management and motor control.
4. **Power Conversion and Protection**: In power conversion and power protection modules, the IPB107N20N3 G-VB can be used for high voltage switches and protection circuits. Its high voltage tolerance and low on-resistance enable it to provide stable performance in these applications and effectively protect circuits from overvoltage and overcurrent.
With its high voltage, high current and low power consumption characteristics, the IPB107N20N3 G-VB is widely used in various high-performance, high-demand power supply and power control fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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