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IPB100P03P3L-04-VB Product details
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Product Introduction
IPB100P03P3L-04-VB is a high-performance single P-channel MOSFET in TO263 package, designed for negative voltage and high current applications. Its maximum drain-source voltage (VDS) is -30V and its maximum on-current (ID) is -100A. The on-resistance of this MOSFET is 6.25mΩ at a gate drive voltage of 4.5V and 5mΩ at 10V, showing its low conduction loss and high efficiency characteristics. Using advanced trench technology (Trench), the device provides excellent switching performance and efficient current control capability, suitable for scenarios requiring efficient current handling.
IPB100P03P3L-04-VB is a high-performance single P-channel MOSFET in TO263 package, designed for negative voltage and high current applications. Its maximum drain-source voltage (VDS) is -30V and its maximum on-current (ID) is -100A. The on-resistance of this MOSFET is 6.25mΩ at a gate drive voltage of 4.5V and 5mΩ at 10V, showing its low conduction loss and high efficiency characteristics. Using advanced trench technology (Trench), the device provides excellent switching performance and efficient current control capability, suitable for scenarios requiring efficient current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -3V | -100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -3V | -100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -3V | -100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 6.25mΩ
- @ VGS = 10V: 5mΩ
- **Maximum on-current (ID)**: -100A
- **Technology type**: Trench
- **Package type**: TO263
- **Channel configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 6.25mΩ
- @ VGS = 10V: 5mΩ
- **Maximum on-current (ID)**: -100A
- **Technology type**: Trench
Domain and module applications：
Applications and module examples: The high current handling capability and low on-resistance of the IPB100P03P3L-04-VB MOSFET make it suitable for multiple high-efficiency applications. First, it performs well in negative voltage switching power supplies (Buck converters), which can efficiently handle current, reduce power losses, and improve the overall efficiency of the system. Secondly, in electric vehicles and battery management systems (BMS), this MOSFET can stably control current to ensure safe and efficient operation of the system. Due to its low on-resistance and high current handling capability, this MOSFET is also suitable for high-efficiency motor drive circuits and power management systems, and can operate stably under high current and negative voltage conditions to ensure the reliability and performance of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
