中文
English
IPB100N10S3-05-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
IPB100N10S3-05-VB is a high-performance single N-channel MOSFET in TO263 package. It can withstand drain-source voltage (VDS) up to 100V and supports gate voltage (VGS) of ±20V. The turn-on voltage (Vth) of this MOSFET is 3V, the on-resistance (RDS(ON)) is 4mΩ@VGS=10V, and the drain current (ID) is up to 140A. Based on advanced Trench technology, this MOSFET provides excellent conduction performance and low power consumption, and is suitable for a variety of high-power, high-current application scenarios.
IPB100N10S3-05-VB is a high-performance single N-channel MOSFET in TO263 package. It can withstand drain-source voltage (VDS) up to 100V and supports gate voltage (VGS) of ±20V. The turn-on voltage (Vth) of this MOSFET is 3V, the on-resistance (RDS(ON)) is 4mΩ@VGS=10V, and the drain current (ID) is up to 140A. Based on advanced Trench technology, this MOSFET provides excellent conduction performance and low power consumption, and is suitable for a variety of high-power, high-current application scenarios.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Drain current (ID)**: 140A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Drain current (ID)**: 140A
- **Technology**: Trench technology
Domain and module applications：
3. Application fields and module examples
1. **High-power switching power supply**: IPB100N10S3-05-VB is suitable for high-power switching power supplies, such as server power supplies and industrial power supplies. Its high current handling capability and low on-resistance help improve the overall efficiency of the power supply, reduce power loss, and improve the stability and performance of the system.
2. **Electric vehicle charging system**: In the charging system of electric vehicles, this MOSFET can withstand high voltage and high current, and is suitable for the power switch of the charger, ensuring an efficient charging process and improving the safety and reliability of the charging system.
3. **Motor drive**: IPB100N10S3-05-VB also performs well in motor drive applications and can effectively drive high-power motors. Due to its low RDS(ON) and high current capability, it can improve the driving efficiency of the motor and is suitable for power tools and industrial motor control systems.
4. **Power Management System**: In various power management systems, including energy conversion and distribution modules, the high current handling capability and low power consumption provided by this MOSFET help optimize the power conversion efficiency of the system, and is suitable for renewable energy systems such as photovoltaic inverters.
The high current carrying capacity, low on-resistance and high voltage tolerance of the IPB100N10S3-05-VB make it excellent in various high-power and high-current applications, providing high-efficiency and reliable solutions.
1. **High-power switching power supply**: IPB100N10S3-05-VB is suitable for high-power switching power supplies, such as server power supplies and industrial power supplies. Its high current handling capability and low on-resistance help improve the overall efficiency of the power supply, reduce power loss, and improve the stability and performance of the system.
2. **Electric vehicle charging system**: In the charging system of electric vehicles, this MOSFET can withstand high voltage and high current, and is suitable for the power switch of the charger, ensuring an efficient charging process and improving the safety and reliability of the charging system.
3. **Motor drive**: IPB100N10S3-05-VB also performs well in motor drive applications and can effectively drive high-power motors. Due to its low RDS(ON) and high current capability, it can improve the driving efficiency of the motor and is suitable for power tools and industrial motor control systems.
4. **Power Management System**: In various power management systems, including energy conversion and distribution modules, the high current handling capability and low power consumption provided by this MOSFET help optimize the power conversion efficiency of the system, and is suitable for renewable energy systems such as photovoltaic inverters.
The high current carrying capacity, low on-resistance and high voltage tolerance of the IPB100N10S3-05-VB make it excellent in various high-power and high-current applications, providing high-efficiency and reliable solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
